A Dielectric Loss Model Based on Interfacial Electron Tunneling

Wilcox, P. S.

doi:10.1139/p72-129

Cited by 15 publications

(4 citation statements)

References 3 publications

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“…Here, we derive the expressions for j TAT ðtÞ and j MPF ðtÞ. The present derivation is based on earlier treatments of transient currents arising due to trap-assisted tunneling alone [14,15]. Modifications implemented here include (i) inclusion of a modified Poole-Frenkel emission process, in which part of the electrons trapped due to the TAT process are lost to thermal emission to the conduction band of the dielectric, (ii) explicit time evolution of the leakage current that will help in easy inclusion of other processes, and (iii) consideration of arbitrary trap density distribution functions.…”

Section: Derivation Of Leakage Current Expressionsmentioning

confidence: 99%

“…Assuming TAT is the only process in operation, the net rate of change of trapped electronic charge in the dielectric at each trap level is given by [14,15] …”

Section: Purely Trap Assisted Tunneling (Tat)mentioning

confidence: 99%

“…Although small changes in the TAT current can be seen with changes in the barrier height, these changes are far smaller than those seen with the Schottky and MPF currents. The reason being that while the latter currents display exponential dependence on the barrier height, the TAT current for more or less homogeneous distributions of defects displays a much weaker dependence (% 1=F S ) [14,15]. Although it may be premature to conclude that the reactivity of the electrode has a minor effect on the transient current (as the impact of the electrode type on the defect distribution has been ignored in this analysis), we wish to point out that measurements on non-integrated TaO x and HfO 2 MIM capacitors do indicate the weak dependence of the transient current on the electrode type [3].…”

Section: J-t Characteristicsmentioning

confidence: 99%

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Phenomenological theory to model leakage currents in metal–insulator–metal capacitor systems

Ramprasad

2003

Physica Status Solidi (b)

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A phenomenological model intended to provide a description of leakage behavior in metal-insulatormetal (MIM) capacitor devices is presented. The model is able to predict both transient and steady state leakage currents under constant voltage bias conditions (the J-t characteristics), as well as J-V characteristics for a given voltage sweep schedule. The electronic transport processes currently implemented in the model include trap assisted tunneling (TAT) of electrons from the electrode to defect or trap states in the dielectric, modified Poole-Frenkel (MPF) emission of part of the trapped electrons to the conduction band of the dielectric, and Schottky emission of Fermi level electrons directly from the electrode to the conduction band of the dielectric. The model is able to predict many of the observed features, including characteristic slopes in J-t and J-V plots, and dependences of the leakage current on dielectric thickness, temperature and the Schottky barrier height.

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Section: Derivation Of Leakage Current Expressionsmentioning

confidence: 99%

“…Assuming TAT is the only process in operation, the net rate of change of trapped electronic charge in the dielectric at each trap level is given by [14,15] …”

Section: Purely Trap Assisted Tunneling (Tat)mentioning

confidence: 99%

Section: J-t Characteristicsmentioning

confidence: 99%

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Phenomenological theory to model leakage currents in metal–insulator–metal capacitor systems

Ramprasad

2003

Physica Status Solidi (b)

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“…We note that the concept of direct tunnelling of electrons from an electrode into traps in an insulator has been used successfully in dielectric loss models for insulators (Cherki et al 1970, Wilcox 1972, Wintle 1973. Tunnelling between traps has been established as a conduction mechanism in a compensated inorganic semiconductor (Mott and Twose 1961).…”

Section: Appendix Charging Time Considerationsmentioning

confidence: 99%

The role of bulk traps in metal-insulator contact charging

Chowdry

Westgate

1974

J. Phys. D: Appl. Phys.

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Metal-insulator contact charging models are presented for insulators having (a) traps uniformly distributed in the energy gap and (b) discrete traps in the energy gap. It is shown that in the former case the relationship between the magnitude of the charge transferred and the workfunction difference is linear, while in the latter case it ranges from an exponential to a quadratic depending on the band bending and the energetic position of the traps. Screening lengths are calculated for the two cases, and it is shown that the thickness of the insulator is usually not the limiting factor in contact charging, even for thin-film insulators. Finally, it is shown that the times required for the charge transfer can be short.

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Transient Currents in Dielectrics at Non-Linear Law of Single Injection

Baginskii

Kostsov

1985

phys. stat. sol. (a)

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The fentures of transient single-injection current behaviour in the presence of a single level of traps in the dielectric volume and a non-linear (exponential) law of charge carrier emission from the con1 act are considered. An exact numerical solution of the problem and approximated analytical expressions for thetime-dependent values of current, charge, space-charge centroid, freecrtrrier roncentration, and electric field on the injecting interface, E,, a t the section of E, screening itre obtained under conditions of autoelectronic emission. The problem is generalized to an arbitrary form of the exponential emission law. This form of the emission law is ascertained to result in a (l/t)-time dependence of the total current a t the section of E , screening. Methods of defining the transient current flow mechanism and the dielectric layer parameters based on the results of the analysis carried out are proposed. PaCC\IOTpeHLI OC06eHHOCTkI peJIaKCaUHH IlepeXoAHorO TOKa MOHOIIOXHpHO% EIHIKeHIW' I IIpIl HilJIHYMH MOHO3HepreTHqeCHHX JIOByIIIeIc B o6'beMe HH3JIeKTpMKa PI HeJIMHefiHOM (3fiCllOI[eHUHaJIbHoM) 3aHOHe 3MHCCMH HOCHTeJIeR 3apcIAa C KOHTBHTa. H a IIpMMepe a€iTO.J.iIC' KTpOHHOfi 3WHCCHH IIoJlyYeHO TOqHOe YHCJIeHHOe PeIIIeHMe 3 a R a s H kI n p n 6 n~-XelIHbI(' alIaJIHTHYeCHHe BbIpaWeHHJX, OnMCbIBafOLUMe M3MeHeHHe BO BpeMeIIH T O K a , rlJaHHUC! E , IIa yYacTHe 3KpaHHpoBaHMfI E,. BaAaYa 0606we~a Ha IIpOH3BOJILHbIfi B M A 3K;CIIOH~'IlUllaJIbHO~O 3aKOHa 3MMCCMH. BbIJIO yCTZlHOBJIeH0, YTO TaIEOfi BHH 3aKOHa 3&IIICCIII$ Il1)HBORPIT K 3aBHCHMOCTH IIOjIIIOrO TOHB OT BpeMeHH t THIIa (l/t) I r a YqaCTKe aapma , q e a~p o~n a , IiomeHTpaium CB060AHblX IIocaTeneii M I I O J I~ Ha nHweKTapymue% x:parII. ipoear-rEIR>oBamifl E,. IIpeAnomeIra MeToRHKa onpeReneHHcI ~e x a~m~a pexaKcawm ToICa H napawwpoe CJIOJX ~r n s n e~~p~~a , 6a3~pyroqacic~ Ha p e 3 y m~a~a x npoBezeaHoro a11am3a.

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A Dielectric Loss Model Based on Interfacial Electron Tunneling

Cited by 15 publications

References 3 publications

Phenomenological theory to model leakage currents in metal–insulator–metal capacitor systems

Phenomenological theory to model leakage currents in metal–insulator–metal capacitor systems

The role of bulk traps in metal-insulator contact charging

Transient Currents in Dielectrics at Non-Linear Law of Single Injection

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