A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer

Xia, Sihao; Liu, Lei; Kong, Yike; Diao, Yu

doi:10.1016/j.cplett.2016.09.074

Cited by 7 publications

(2 citation statements)

References 15 publications

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“…The bottom GaN layer was terminated with hydrogen atoms which is consistent with a previous work. 36,37 The structure underwent geometry optimization, allowing all atoms to relax while keeping the lattice parameters fixed until the total energy was converged to 10 −5 eV and the Hellman− Feynman force on each relaxed atom was less than 0.03 eV Å −1 .…”

Section: ■ Materials and Methodsmentioning

confidence: 99%

2D/3D Hybrid of MoS₂/GaN for a High-Performance Broadband Photodetector

Jain

Low

Taylor

et al. 2021

ACS Appl. Electron. Mater.

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Narrow spectral sensitivity in materials is one of the crucial challenges to develop high-performance broadband photodetectors. Here, we design a heterostructure of two-dimensional molybdenum disulfide (MoS2) and epitaxial gallium nitride (GaN) films to create an enhanced spectral absorption profile. This combination utilizes complementary optical absorption of MoS2 (visible) and GaN (UV) driven by type II band alignment at their interface to showcase highly sensitive photodetectors spanning across the UV–NIR regime. Concurrently, the heterostructure exhibits significantly enhanced responsivity (order of 104 A/W) and external quantum efficiency that are 500% higher than the bare GaN photodetectors. Given the available scalable synthesis approaches that have now been designed by the research community for both constituent materials, the demonstration of this heterostructure as a broadband photodetector with high figures-of-merit opens opportunities in designing efficient optoelectronic junctions and imaging applications.

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Section: ■ Materials and Methodsmentioning

confidence: 99%

2D/3D Hybrid of MoS₂/GaN for a High-Performance Broadband Photodetector

Jain

Low

Taylor

et al. 2021

ACS Appl. Electron. Mater.

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“…The bottom GaN layer was terminated with hydrogen atoms (with a charge of 0.75 e), consistent with previous work. [101,102] van der Waals interactions were accounted for by the DFT-D3 method.…”

Section: Methodsmentioning

confidence: 99%

Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Jiang,

Zhou,

et al. 2023

Advanced Optical Materials

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Abstractvan der Waals (vdW) heterogeneous integration and doping engineering have emerged as crucial factors in advancing the development of functional device systems. This work presents a fully vertical 2D/3D vdW stacking p‐MoxRe1‐xS2/GaN (x = 0.10 ± 0.02) heterojunction photodetector, integrating multiple strategies for enhanced performance, such as mixed‐dimensional stacking, p‐type doping, vertical device design, and type‐II band alignment. By integrating horizontal, vertical, and quasi‐vertical devices on a Free‐standing (FS)‐GaN substrate, the vertical p‐MoxRe1‐xS2/GaN device demonstrates superior performance, including high Ilight/Idark ratio (1.48 × 106), large Responsivity (888.69 AW−1), high specific detectivity (D*) (6.13 × 1014 Jones), and fast response speed (rise/decay time of 181 ms/259 ms). Moreover, the spectral response encompasses the ultraviolet (UV), visible, and near‐infrared (NIR) regions through energy band integration and bandgap modulation. This design surpasses previous devices, highlighting the potential of highly sensitive and micro‐integrated optoelectronic devices enabled by vertical vdW heterogeneous integration.

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The Photocatalytic Properties of VZn–N Co-doped ZnO: A First-Principles Investigation

et al. 2020

Catal Lett

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A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer

Cited by 7 publications

References 15 publications

2D/3D Hybrid of MoS₂/GaN for a High-Performance Broadband Photodetector

2D/3D Hybrid of MoS₂/GaN for a High-Performance Broadband Photodetector

Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

The Photocatalytic Properties of VZn–N Co-doped ZnO: A First-Principles Investigation

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A DFT study on NEA GaN photocathode with an ultrathin n-type Si-doped GaN cap layer

Cited by 7 publications

References 15 publications

2D/3D Hybrid of MoS2/GaN for a High-Performance Broadband Photodetector

2D/3D Hybrid of MoS2/GaN for a High-Performance Broadband Photodetector

Vertical Van Der Waals Epitaxy of p‐MoxRe1‐Xs2 on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

The Photocatalytic Properties of VZn–N Co-doped ZnO: A First-Principles Investigation

Contact Info

Product

Resources

About

2D/3D Hybrid of MoS₂/GaN for a High-Performance Broadband Photodetector

2D/3D Hybrid of MoS₂/GaN for a High-Performance Broadband Photodetector

Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector