2017
DOI: 10.1039/c7tc01320e
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A DFT study and experimental evidence of the sonication-induced cleavage of molybdenum sulfide Mo2S3 in liquids

Abstract: Bulk Mo2S3 may be dispersed into colloidal nanosheets and assembled into thin films with potential for use in gas sensors.

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Cited by 16 publications
(2 citation statements)
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“…The optimized structure of CuInS 2 is shown in Figure a. The CuInS 2 crystal structure belongs to the tetragonal space group I- 42 d , whereas the Mo 2 S 3 crystal structure belongs to the monoclinic space group P 21/ m . , Theoretical calculations, as illustrated in Figure b,c, indicate that CuInS 2 is characterized as a direct bandgap semiconductor with an energy gap of 0.999 eV. The CB of CuInS 2 is predominantly composed of Cu p orbitals, whereas its VB is primarily composed of In d orbitals.…”
Section: Resultsmentioning
confidence: 99%
“…The optimized structure of CuInS 2 is shown in Figure a. The CuInS 2 crystal structure belongs to the tetragonal space group I- 42 d , whereas the Mo 2 S 3 crystal structure belongs to the monoclinic space group P 21/ m . , Theoretical calculations, as illustrated in Figure b,c, indicate that CuInS 2 is characterized as a direct bandgap semiconductor with an energy gap of 0.999 eV. The CB of CuInS 2 is predominantly composed of Cu p orbitals, whereas its VB is primarily composed of In d orbitals.…”
Section: Resultsmentioning
confidence: 99%
“…The sulfur deficiency in the thin film deposits might suggest the presence of either Mo 2 S 3 or Chevrel phase Cu x Mo 6 S 8 , since both are sulfur-deficient relative to MoS 2 . However, Mo 2 S 3 has a primitive monoclinic structure with its strongest XRD peak ( 101) at 2θ = 16.3 • , 37,38 while Cu x Mo 6 S 8 has a rhombohedral structure with its strongest XRD peak (101) at 2θ = 13.8 • . 39,40 One possible explanation for the sulfur deficiency in Cu-doped MoS 2 is the presence of small amounts of Mo 2 S 3 or Chevrel phase Cu x Mo 6 S 8 ., particularly in amorphous form.…”
Section: Thin Film Characterization-potentiostatic Deposition For 2 H Atmentioning
confidence: 99%