2022
DOI: 10.1016/j.jpcs.2022.110982
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A DFT investigation of Al2XS4 (X=Hg, Mg) for energy harvesting applications

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Cited by 12 publications
(3 citation statements)
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“…Generally, the direct band profits from the effective utilization of sunlight because there is no need for carriers to relax during transition between the valence band and conduction band. As depicted in Figure , all the studied materials possess direct band structures because the valence band maximum (VBM) and conduction band minimum (CBM) are both located at the L point in the Brillouin zone . The band gaps are 1.644, 0.455, 2.136, and 0.683 eV for K 2 InCoF 6 , K 2 InCoCl 6 , Rb 2 InCoF 6 , and Rb 2 InCoCl 6 , respectively, all belonging to narrow band gap semiconductors.…”
Section: Resultsmentioning
confidence: 99%
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“…Generally, the direct band profits from the effective utilization of sunlight because there is no need for carriers to relax during transition between the valence band and conduction band. As depicted in Figure , all the studied materials possess direct band structures because the valence band maximum (VBM) and conduction band minimum (CBM) are both located at the L point in the Brillouin zone . The band gaps are 1.644, 0.455, 2.136, and 0.683 eV for K 2 InCoF 6 , K 2 InCoCl 6 , Rb 2 InCoF 6 , and Rb 2 InCoCl 6 , respectively, all belonging to narrow band gap semiconductors.…”
Section: Resultsmentioning
confidence: 99%
“…As depicted in Figure 2, all the studied materials possess direct band structures because the valence band maximum (VBM) and conduction band minimum (CBM) are both located at the L point in the Brillouin zone. 71 The band gaps are 1.644, 0.455, 2.136, and 0.683 eV for K 2 InCoF 6 , K 2 InCoCl 6 , Rb 2 InCoF 6 , and Rb 2 InCoCl 6 , respectively, all belonging to narrow band gap semiconductors. Especially, the band gap of K 2 InCoF 6 is the closest to the recommended range of absorption layer in single junction solar cells (1.1 to 1.4 eV), 72 which is also suitable for light absorbers in energy storage applications.…”
Section: Mechanical Propertiesmentioning
confidence: 97%
“…Also, it is made up of various energy levels in which electrons are not allowed to exist. [49] Direct E g compounds are promising in optical devices as phonons generated in indirect-gap semiconductors make them poor emitters of light which ultimately cause heating of the devices. [50][51][52][53] The calculated direct E g for Cs 2 AgInCl 6 / Cs 2 NaInCl 6 are 2.52/5.24 eV, respectively at Γ symmetry points (see Figure 2a,b) by employing mBJ potential.…”
Section: Electronic Propertiesmentioning
confidence: 99%