A device model for an ion-implanted MESFET

Taylor, G.W.; Darley, H. M.; Frye, R.C.; Chatterjee, P.K.

doi:10.1109/t-ed.1979.19401

Cited by 87 publications

(18 citation statements)

References 8 publications

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“…In other words, doping concentration with depth rises more steeply in the case of the gaussian profile than in the new approach, and so carriers will have more space to settle themselves in the latter case whenever the input voltage is applied, thus reducing the threshold voltage (magnitude wise). Figure 4 clearly shows that the results so obtained are in good agreement with the experimental data (Taylor et al 1979). Figure 5 shows the plot of the I d-V d characteristics for the dopants, P As and Sb in the pre-and post-anneal conditions.…”

supporting

confidence: 80%

“…The calculated threshold voltage is compared to the complete gaussian description (Taylor et al 1979) at E = 80 keV, and it is also observed that V T decreases for the former case (Fig. 3) and can be explained by profile studies.…”

mentioning

confidence: 75%

“…Equation (3) is solved by the non-rectangular boundary conditions (Taylor et al 1979) and the potential can be written as where h m = h m-1 / (m + f ); h 0 = 1; l m = m + f ; m = 1 to 4 and f = 0´957/ b 2 . Here f , h and l are dependent on skewness and kurtosis (Rajesh et al 1995).…”

Section: Model Analysismentioning

confidence: 99%

“…The presence of deep level traps (DLT) in the semiconductor further complicates this problem. The earlier models (Taylor et al 1979, Chattopadhyay et al 1987, Chattopadhyay and Pal 1989 of ion-implanted MESFET made use of an approximated two moment gaussian description, i.e. range (R p ) and straggle (s ), which failed to calculate the large tailing characteristics near the surface of the channel.…”

Section: Introductionmentioning

confidence: 99%

“…This may also cause the enhancement of the drain current in the Pearson approach. Comparison has also been carried out with the experimental data (Taylor et al 1979) in Fig. 6.…”

mentioning

confidence: 99%

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Optimization of Si MESFET model with Pearson distribution (FMA): a novel approach

Rajesh¹,

Thomas²,

Gupta³

1996

International Journal of Electronics

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A new optimal predictive model of ion-implanted Si d-MESFETs with improved performance is proposed. We demonstrate quantitatively that Pearson's higher moments have a major influence on the device performance. An enhancement in the drain± source current is reported. Reduction of the threshold voltage is also established when compared with the gaussian approach. The closer agreement with the experimental data confirms the validity of this model. Nomenclaturex direction along which ions are implanted X dg distance from surface to edge of gate depletion region in the channel X ds distance from surface to edge of substrate depth region in the channel X p distance from surface to channel potential minimum X pm maximum value of X p in the above threshold condition with V p = 0 Z channel width b implant kurtosis parameter D depth of Fermi level below the conduction band in the undepleted channel ² permittivity of the semiconductor u B metal semiconductor work function difference G implant skewness parameter ¹ carrier mobility s implant straggle parameter

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supporting

confidence: 80%

mentioning

confidence: 75%

Section: Model Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…This may also cause the enhancement of the drain current in the Pearson approach. Comparison has also been carried out with the experimental data (Taylor et al 1979) in Fig. 6.…”

mentioning

confidence: 99%

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Optimization of Si MESFET model with Pearson distribution (FMA): a novel approach

Rajesh¹,

Thomas²,

Gupta³

1996

International Journal of Electronics

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Cutoff frequency and optimum noise figure of GaAs optically controlled FET

Bose

Gupta

2000

Microw. Opt. Technol. Lett.

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An analytical model for the cutoff frequency and optimum noise figure of an optically controlled GaAs MESFET suitable for microwave integrated circuits and high‐frequency optical communication systems is presented. The model calculates the cutoff frequency and optimum noise figure under dark and illuminated conditions. The significant feature is that, under optically controlled operation, the cutoff frequency increases, and a drastic reduction in the optimum noise figure is obtained. Some of the predicted results under dark conditions are compared with the data available in the literature to validate our proposed model. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 26: 279–282, 2000.

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Analytical modelling of a MOSFET with non-uniform impurity profile

Agrawal

Gopal

Dwivedi

et al. 1988

Phys. Stat. Sol. (a)

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A displaced Gaussian profile is used to develop an analytical model for drain current and voltage characteristics of an n‐channel enhancement mode MOSFET. The averaged concentrations over the junction depth of source and drain are also considered as uniform case to compare the results. The threshold voltage in both the cases is calculated for different straggling ranges of the implanted profile. The validity of the averaged assumption for the uniform case and Taylor et. al.'s approximation in the present analysis are checked. The present results reveal that the earlier analyses of a MOSFET with an averaged Gaussian profile upto the junction depth is in error and better insight is achieved by considering a non‐uniform impurity profile. It is also found that Taylor et. al.'s approximation results in more error compared to the averaged case.

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A device model for an ion-implanted MESFET

Cited by 87 publications

References 8 publications

Optimization of Si MESFET model with Pearson distribution (FMA): a novel approach

Optimization of Si MESFET model with Pearson distribution (FMA): a novel approach

Cutoff frequency and optimum noise figure of GaAs optically controlled FET

Analytical modelling of a MOSFET with non-uniform impurity profile

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