A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology

Li, Yu; Xue, Yongkang; Sun, Zixuan; Shen, Cong; Ren, Pengpeng; Ji, Zhigang; Zhang, Lining; Wang, Runsheng; Huang, Ru

doi:10.1109/ted.2023.3322665

Cited by 1 publication

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“…In practical circuit operations, devices experience various reliability issues, triggering non-ideal effects such as circuit functional aging and failure. As shown in Figure 1 , taking a typical inverter circuit as an example, devices undergo three typical biasing conditions: gate voltage (V gs ) > 0 V, drain voltage (V ds ) = 0 V; |V gs | > 0 V, |V ds | > 0 V and V gs = 0 V, |V ds | > 0 V. The degradation phenomena observed in NMOS or PMOS devices under the bias condition of |V gs | > 0 V, V ds = 0 V are, respectively, termed positive bias temperature instability (PBTI) [ 24 , 25 , 26 ] and negative bias temperature instability (NBTI) [ 27 , 28 , 29 , 30 , 31 , 32 , 33 ]. The degradation phenomenon observed when the device is under the bias condition of |V gs | > 0 V, |V ds | > 0 V is referred to as hot carrier degradation (HCD) [ 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 ].…”

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confidence: 99%

The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms

Sun,

Chen,

Zhang

et al. 2024

Micromachines

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With the technological scaling of metal–oxide–semiconductor field-effect transistors (MOSFETs) and the scarcity of circuit design margins, the characteristics of device reliability have garnered widespread attention. Traditional single-mode reliability mechanisms and modeling are less sufficient to meet the demands of resilient circuit designs. Mixed-mode reliability mechanisms and modeling have become a focal point of future designs for reliability. This paper reviews the mechanisms and compact aging models of mixed-mode reliability. The mechanism and modeling method of mixed-mode reliability are discussed, including hot carrier degradation (HCD) with self-heating effect, mixed-mode aging of HCD and Bias Temperature Instability (BTI), off-state degradation (OSD), on-state time-dependent dielectric breakdown (TDDB), and metal electromigration (EM). The impact of alternating HCD-BTI stress conditions is also discussed. The results indicate that single-mode reliability analysis is insufficient for predicting the lifetime of advanced technology and circuits and provides guidance for future mixed-mode reliability analysis and modeling.

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