A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes

Aydemir, Umut; Taşçıoğlu, İlke; Altındal, Ş.; Uslu, İbrahım

doi:10.1016/j.mssp.2013.07.013

Cited by 44 publications

(24 citation statements)

References 41 publications

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“…These results indicate that there are considerable increase in the quality of the diode. It is believed that the use of an interfacial layer between metal and semiconductor can significantly improve the performance of the diode [38][39][40].…”

Section: Capacitance-voltage (C-v) and Conductance-voltage (G/ω-v) Chmentioning

confidence: 99%

The effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature

Demirezen

Kaya

Vural

et al. 2015

Materials Science in Semiconductor Processing

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Section: Capacitance-voltage (C-v) and Conductance-voltage (G/ω-v) Chmentioning

confidence: 99%

The effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature

Demirezen

Kaya

Vural

et al. 2015

Materials Science in Semiconductor Processing

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“…Owing to their stability and barrier height (BH) modification features, organic materials have been employed particularly in metal/semiconductor (MS) diodes [7][8][9][10][11][12][13][14]. Campbell et al [9] inserted an organic thin film to the metal/semiconductor interface and thus modified the effective Schottky barrier height.…”

Section: Introductionmentioning

confidence: 99%

“…Aydoğan et al [11] discussed the temperature dependent I-V characteristics of Al/Polypyrrole(PPy)/p-Si Schottky diode. Aydemir et al [12] fabricated Au/n-Si and Au/PVA:Zn/n-Si Schottky diodes to investigate the effect of organic interfacial layer on the main electrical characteristics. PVA:Zn was successfully deposited on n-Si wafer by using the electrospinning system and surface morphology of PVA:Zn was presented by SEM images.…”

Section: Introductionmentioning

confidence: 99%

Untitled

2016

Eur. j. interdiscip. stud.

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This work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP) MIS structure presents a rectifying contact behavior. The values of ideality factor (n) and barrier height (BH) for the Ag/MV/p-InP MIS diode by using the current-voltage (I-V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/p-InP MIS structure was significantly higher than the value of 0.64 eV of Ag/p-InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/p-InP MIS diode by using the capacitance-voltage (C-V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/p-InP structure was seen to change from 2.57×10 13 eV -1 cm -2 to 2.19×10 12 eV -1 cm -2 .

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“…In this reason, to improve the performance of device there are many attempts to improve the performance of Schottky based diodes and continuous control of the barrier height (BH) at MS interface by using an organic interfacial layer [16][17][18] due to their easy of devices processing, flexibility, high dielectric constant and low cost. Among them Vural et al [16] investigated the current-voltage (I-V) characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range.…”

Section: Introductionmentioning

confidence: 99%

“…Among them Vural et al [16] investigated the current-voltage (I-V) characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range. Aydemir et al [17] was fabricated the Au/Zn-doped PVA/n-Si (MPS) type diode to improve the rectification characteristics in compression with those of conventional Au/n-Si (MS) type diode. They showed that the use of Zn-doped PVA interfacial layer is considerably reduced both the leakage current and Nss of the diode.…”

Section: Introductionmentioning

confidence: 99%

Single Gaussian distribution of barrier height in Al/PS–ZnPc/p-Si type Schottky barrier diode in temperature range of 120–320 K

Sarıyıldız

Vural

Evecen

et al. 2014

J Mater Sci: Mater Electron

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Possible current-transport mechanism in aluminum/polystrene-zincphthalocyanine/ptype silicon Schotky barrier diode (Al/PS-ZnPc/p-Si; SBD), for the forward bias current-voltage (I-V) characteristics were carried out in the temperature range of 120-320 K. The high value of ideality factor (n), especially at low temperatures, was attributed to the existence of PS layer, barrier in-homogeneities and particular density distribution of surface states between metal and semiconductor. An abnormal decrease in the zero-bias barrier height (BH) and increase in n with decreasing temperature which leads to non-linearity in the Richardson plot, have been observed. Linear relationship between BH and n was also observed. BH was plotted as a function of q/2kT to obtain evidence of Gaussian distribution (GD) of the BHs. The mean BH and its standard deviation (r) were obtained as 1.03 eV and 0.117 V from the slope and intercept of this plot, respectively. Thus, the modified ln(Io/T 2 ) -q 2 ro 2 /2k 2 T 2 versus q/kT plot gives mean BH and the modified Richardson constant A Ã mod as 1.043 eV and 29.824 A cm -2 K -2 , respectively. This value of the Richardson constant is very close to the theoretical value of 32 A cm -2 K -2 for p-type Si. Therefore, non-ideal behavior of forward-bias I-V characteristics in Al/PS-ZnPc/p-Si might be successfully explained in terms of the thermionic emission mechanism with single GD of BHs.

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A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes

Cited by 44 publications

References 41 publications

The effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature

The effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature

Untitled

Single Gaussian distribution of barrier height in Al/PS–ZnPc/p-Si type Schottky barrier diode in temperature range of 120–320 K

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