A designing roule for a pressure sensor with PZT layer

Ravariu, Cristian; Ravariu, F.; Dobrescu, D.; Dobrescu, Lidia; Codreanu, C.; Avram, Mărioara

doi:10.1109/smicnd.2001.967488

Cited by 8 publications

(7 citation statements)

References 5 publications

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“…Pressure waves associated with blood flow appear as mechanically induced changes in capacitance. Enhanced embodiments exploit films of PZT in capacitor structures that connect to silicon metal oxide semiconductor field effect transistors (MOSFETs) for signal manipulation 23 . A drawback of such technologies for use on the skin follows from their planar, rigid formats.…”

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confidence: 99%

Conformable amplified lead zirconate titanate sensors with enhanced piezoelectric response for cutaneous pressure monitoring

et al. 2014

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The ability to measure subtle changes in arterial pressure using devices mounted on the skin can be valuable for monitoring vital signs in emergency care, detecting the early onset of cardiovascular disease and continuously assessing health status. Conventional technologies are well suited for use in traditional clinical settings, but cannot be easily adapted for sustained use during daily activities. Here we introduce a conformal device that avoids these limitations. Ultrathin inorganic piezoelectric and semiconductor materials on elastomer substrates enable amplified, low hysteresis measurements of pressure on the skin, with high levels of sensitivity (B0.005 Pa) and fast response times (B0.1 ms). Experimental and theoretical studies reveal enhanced piezoelectric responses in lead zirconate titanate that follow from integration on soft supports as well as engineering behaviours of the associated devices. Calibrated measurements of pressure variations of blood flow in near-surface arteries demonstrate capabilities for measuring radial artery augmentation index and pulse pressure velocity.

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confidence: 99%

Conformable amplified lead zirconate titanate sensors with enhanced piezoelectric response for cutaneous pressure monitoring

et al. 2014

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Section: Authors' Contributionsmentioning

confidence: 99%

“…The study of electrophysiological model of beta cell using inside glucose of bloodstream has been analysed in [38]. An analytical model of proposed pressure sensor has been illustrated using the coupling between the piezoelectric effect in PZT and Ψ‐MOSFET [39]. The contributions of this paper are as follows: Simultaneously p and n‐type bio‐molecular FET can be designed using fault free electrical doping procedure within a single device. Controllable current and spin polarised model for transmission spectra and device density of states (DDOS) are achieved both in forward and reverse bias. 1.76 μA current is achieved with ultra low, i.e.…”

Section: Authors’ Contributionsmentioning

confidence: 99%

Electronic characterisation of atomistic modelling based electrically doped nano bio p‐i‐n FET

Dey

Roy

2016

IET Computers & Digital Techniques

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In this study, electrically doped bio-molecular p-in field-effect transistor (FET) is designed and its electronic properties are investigated. Density functional theory along with non-equilibrium Green's function based first principle approach is used to design the bio-molecular FET at sub-atomic region. Three Adenine and two Thymine molecules are attached together to form 6.24 nm long and 1.40 nm wide bio p-in FET. This device is attached with two platinum electrodes and wrapped with a metallic cylindrical gate at high vacuum. Intrinsic n and p regions can be made possible within a bio-molecular device at room temperature by electrical doping without explicit dopants, which leads to conduct current by the device both in forward and reverse bias. The various quantum mechanical properties have been calculated using Poisson's equations and self-consistent function for the bio-molecular FET. Among these various quantum mechanical properties, the authors obtain high quantum transmission along with satisfactory current for the proposed device during the room temperature operation. The goal of this study is to highlight the design of a bio-molecular p-in FET with satisfactory large current using ultra low power dissipation.

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“…A pressure sensor with a PZT layer in the gate of a MOSFET was modeled in a previous work [1]. For thin SOI films, a specific and simpler transistor can be used: pseudo-MOS.…”

Section: Introductionmentioning

confidence: 99%

“…The proposed transistor structure in this paper is available in figure 1. In fact, the previous variants were without n+ diffusionthe case of the pseudo-MOS transducer, or with deep n+ diffusion from Si surface up to the Buried Oxide (BOX) surface -the case of SOI-MOSFET.…”

Section: Introductionmentioning

confidence: 99%

Modified SOI-MOSFET Structure with Shallows Diffusions

Ravariu

Rusu

Ravariu

2007

2007 International Semiconductor Conference

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An MOSFET with a piezoelectric layer instead of the gate insulator represents a sensitive device at a mechanical pressure stimulus. If the SOI structure is modified so that significant currents occur in the VG=OV vicinity, a higher sensitivity is ensured. In a SOI-MOSFET this aim was possible using shallow diffusions n+p about 40... 60nm. An analytical model of the transducer element and ATLAS simulations revealed the electrical behavior of the device. There were comparatively presented the transfer characteristics ofa classical SOI-MOSFET, a pseudo-MOS transistor and a modified SOI transistor with shallows diffusions. The last one represents a trade-off solution for a pressure sensor that needs high response in the zero gate voltage vicinity.

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A designing roule for a pressure sensor with PZT layer

Cited by 8 publications

References 5 publications

Conformable amplified lead zirconate titanate sensors with enhanced piezoelectric response for cutaneous pressure monitoring

Conformable amplified lead zirconate titanate sensors with enhanced piezoelectric response for cutaneous pressure monitoring

Electronic characterisation of atomistic modelling based electrically doped nano bio p‐i‐n FET

Modified SOI-MOSFET Structure with Shallows Diffusions

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