A defect formation mechanism induced by structural reconstruction of a well-known silicon grain boundary.

Influence of A-Site Composition on the Nanostructure and Electrical Properties of APbI3 Perovskite Films: Implications for Solar Cells

“…GBs have been shown to have inherently detrimental effects on the performance of polycrystalline solar cells, such as polycrystalline silicon, CdTe, and CIGS solar cells. − Studies correlating morphology with electrical properties of polycrystalline silicon through electron beam-induced current mapping have revealed that electrical inhomogeneities can be attributed to crystallographic dislocations observed in transmission electron micrographs. , This suggests a correlation among defects, impurities, and electrical properties of semiconductor materials. Electron spin resonance experiments have also demonstrated the existence of dangling bonds as electronic defects in polycrystalline silicon films .…”