A dedicated micromachining technology for high-aspect-ratio millimetre-wave circuits

Saint-Etienne, E.; Pons, Patrick; Blasquez, G.; Temple, Paul; Conedera, Véronique; Dilhan, Monique; Chauffleur, X.; Ménini, Philippe; Plana, R.; Parra, T.; Guillon, B.; Lalaurie, J.C.

doi:10.1016/s0924-4247(98)00073-9

Cited by 22 publications

(8 citation statements)

References 12 publications

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“…The RCI-bandstop filters have been micro-machined on a thin silicon oxide/nitride membrane in order to minimize the dielectric losses (figure 3). The technological process [7] consists in: (1) depositing a bi-layered thin dielectric film on silicon substrate (this film is composed of a 0.8 µm-thick layer of SiO 2 below a 0.6 µm-thick layer of Si 3 N 3.8 ); then (2) patterning the gold layer on the Si 3 N 3.8 top layer for filter realization and finally, (3) removing back-side specified silicon regions under the circuits. The CPWcharacteristic impedance used here is 70 Ω in order to accommodate the slot widths with the resolution of the technological process.…”

Section: Rci-bandstop Filtermentioning

confidence: 99%

Resonant Coupling Irises for the Design of New Planar Bandstop Filters

Takacs¹,

Aubert²,

Pons

et al. 2002

2002 32nd European Microwave Conference

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Original planar bandstop filters based on resonant coupling irises have been micromachined on silicon membranes. These filters have been designed for the transmitters (Tx) and the receivers (Rx) of earth terminals in Ka-band satellite communications. Experimental results show that, in addition to an high attenuation (at least 24.5 dB) in the uplink band, the Rx-filter features a very low insertion loss (lower than 0.3 dB over a 1.5 GHz bandwidth) in the downlink band. The filter dimensions have been dramatically reduced and are only 900 µm wide by 2700 µm long.

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Section: Rci-bandstop Filtermentioning

confidence: 99%

Resonant Coupling Irises for the Design of New Planar Bandstop Filters

Takacs¹,

Aubert²,

Pons

et al. 2002

2002 32nd European Microwave Conference

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“…The membrane is then released through an anisotropic etching of silicon in potassium hydroxyde solution (KOH) allowing properties similar to those obtained in a free space [9]. More details on the technological process could be found in [10].…”

Section: Technological Process Descriptionmentioning

confidence: 99%

Highly Compact Micro-Machined Coplanar Bandpass Filter

Grenier

Pons

Plana

et al. 2000

30th European Microwave Conference, 2000

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-Highly compact micro-machined coplanar bandpass filters based on end-coupled half-wavelength and quarter-wavelength resonators topologies have been investigated. Simple gap and interdigitated capacitive discontinuities have been modeled through an appropriate technique and have been implemented in order to achieve low loss and narrow bandpass membrane micromachined filters. Excellent performances, similar to the state of the art, together with an important improvement in term of compactness have been achieved.

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“…Figure 2 displays the cross-sectional view of the CPWG micromachined on a thin silicon oxide/nitride membrane. The technological process [7] consists of the following steps: (i) depositing a bilayered thin dielectric film on silicon substrate (this film is composed of a 0.8-m-thick layer of SiO 2 under a 0.6-mthick layer of Si 3 N 3.8 ), then (ii) patterning the gold layer on the Si 3 N 3.8 top layer for filter realization, and finally (iii) removing specific backside silicon regions under the circuits. The CPWG characteristic impedance used here is 70⍀ in order to accommodate the slot widths with the resolution of the technological pro- …”

Section: Introductionmentioning

confidence: 99%