A DECT transceiver chip set using SiGe technology

Bopp, M.; Alles, Michael L.; Arens, Michael; Eichel, Doreen; Gerlach, S.; Gotzfried, R.; Gruson, F.; Kocks, M.; Krimmer, G.; Reimann, René; Roos, B.; Siegle, M.; Zieschang, J.

doi:10.1109/isscc.1999.759104

Cited by 18 publications

(5 citation statements)

References 3 publications

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“…4 shows a block diagram of a PAM transmit modulation using a polar alternative in the form of direct amplitude and phase modulation. The direct phase modulation might be performed by modulating the oscillator tuning input in a feed-forward manner with Bopp [5] and B. Zhang [6]. The direct amplitude modulation might be performed by regulating the supply voltage to a constant-envelope power amplifier.…”

Section: Deep-submicron Integration Challengesmentioning

confidence: 99%

Challenges in integrated CMOS transceivers for short distance wireless

Muhammad

Straszewski

Balsara

2001

Proceedings of the 11th Great Lakes Symposium on VLSI

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This paper presents recent trends in the area of integrated CMOS transceiver design for short distance wireless applications. This application is characterized by very low-cost and low-power solutions. Current challenges and recent trends are described and digital-oriented design opportunities for increasing integration outlined. Signal processing approaches applied to the front-end electronics find an increasing emphasis and are extremely viable.

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Section: Deep-submicron Integration Challengesmentioning

confidence: 99%

Challenges in integrated CMOS transceivers for short distance wireless

Muhammad

Straszewski

Balsara

2001

Proceedings of the 11th Great Lakes Symposium on VLSI

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“…A two-point direct modulation scheme (such as in [5]) directly controls the oscillator frequency while compensating for the resulting loop reaction. This approach, however, is analog in nature and requires precise calibration of the oscillator and other PLL analog components.…”

Section: Introductionmentioning

confidence: 99%

LMS-based calibration of an RF digitally controlled oscillator for mobile phones

Staszewski

Wallberg

Hung

et al. 2006

IEEE Trans. Circuits Syst. II

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We propose a least-mean square based gain calibration technique of an RF digitally controlled oscillator (DCO) in an all-digital phase-locked loop (ADPLL). The DCO gain of about 12-kHz/least significant bit is subject to process, voltage and temperature variations, but is tracked and compensated in real time. Precise setting of the inverse DCO gain in the ADPLL modulating path allows direct wide-band frequency modulation that is independent from the ADPLL loop bandwidth. The technique is part of a single-chip fully compliant Global System for Mobile Communications (GSM)/EDGE transceiver in 90-nm digital CMOS.

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“…Recently, two-chip or three-chip solutions for 1.9-GHz digital European cordless telecommunications (DECT) applications have been presented based on various silicon-based technologies [1]- [3]. These chips need to be integrated with off-chip filters and discrete passive elements, such as chip inductors and capacitors, to build a complete RF transceiver module.…”

Section: Introductionmentioning

confidence: 99%

A 1.9-GHz DECT CMOS power amplifier with fully integrated multilayer LTCC passives

Heo

Sutono

Chen

et al. 2001

IEEE Microw. Wireless Compon. Lett.

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We present the first demonstration of a CMOS power amplifier (PA) utilizing fully integrated multilayer low-temperature co-fired ceramic (LTCC) high-passives for 1.9-GHz digital European cordless telecommunications (DECT) applications. The inductor and capacitor library were built in a multilayer LTCC board using a compact topology. An inductor -factor as high as 100 with a self-resonant frequency (SRF) as high as 8 GHz was demonstrated. Measured results of the CMOS-LTCC PA show good agreement with the simulated results exhibiting 48% power added efficiency, 26-dBm output power and 17-dB gain at 1.9 GHz with a 3.3-V drain supply voltage. This result is the first significant step toward a compact DECT transceiver module development utilizing fully integrated multilayer LTCC passives and a standard CMOS technology.

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A DECT transceiver chip set using SiGe technology

Cited by 18 publications

References 3 publications

Challenges in integrated CMOS transceivers for short distance wireless

Challenges in integrated CMOS transceivers for short distance wireless

LMS-based calibration of an RF digitally controlled oscillator for mobile phones

A 1.9-GHz DECT CMOS power amplifier with fully integrated multilayer LTCC passives

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