A Dead-Time-Controlled Gate Driver Using Current-Sense FET Integrated in SiC MOSFET

Niwa, Akimasa; Imazawa, Takanori; Kojima, Ryosuke; Yamamoto, Masahiro; Sasaya, Takanari; Isobe, Takanori; Tadano, Hiroshi

doi:10.1109/tpel.2017.2704620

Cited by 21 publications

(16 citation statements)

References 22 publications

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“…4. Different from the integrated SiC sense circuit [21], the GaN senseFET can be replaced with a silicon n ‐type MOSFET and can be designed to be clamped at different voltage levels to accommodate a wide range of GaN HEMTs. The gate of the senseFET can be shorted to the gate of the LS GaN HEMT or tied to a constant value for higher tracking accuracy.…”

Section: Proposed Drivermentioning

confidence: 99%

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Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit

Zhang

Leng

et al. 2019

IET Power Electronics

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Dead-times are necessary in switching output stage to avoid shoot-through current between the high side (HS) and the low side (LS) power transistors. However, excessively long dead-times can lead to unwanted reverse conduction and power loss. Sensing the duration of reverse conductions are especially difficult for high-voltage enhancement mode (e-mode) gallium nitride (GaN) HEMTs due to their fast switching speed. High-precision sensing circuits are required for dead-time correction as the load current changes and to withstand large voltage swings. Traditional CMOS-based sensing circuits (e.g. standard logic gates) are not suitable for GaN-based converters as they can only handle limited voltage ranges. In addition, severe undershoots (up to −4 V) may damage the sensing circuit. Here, a gate driver IC for e-mode GaN power output stages capable of detecting the presence of reverse conduction with a best resolution of 0.66 ns, a dead-time adjustment resolution of 0.33 ns, and with on-chip closed-loop control is presented. In addition, a novel reverse conduction sensing circuit that can accommodate the large voltage swings at the switching node (SW) is also described. (a) Insufficient dead-time causes shoot-through, (b) Excessive dead-time leads to undershoot [14]

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Section: Proposed Drivermentioning

confidence: 99%

“…An integrated current‐sense FET has also been reported to help correct the dead‐times in SiC output stages. However, the switching frequency was limited to 100 kHz [21].…”

Section: Introductionmentioning

confidence: 99%

Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit

Zhang

Leng

et al. 2019

IET Power Electronics

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“…Protection methods against overcurrent or SC fault have been proposed in numerous previous studies. There are methods of directly measuring current using a shunt resistor or a current sensor [15]- [18], monitoring the change of / [19]- [22], monitoring the gate-source voltage and gate charge characteristics [23] and using sense FET or a current mirror [24], [25]. Among these techniques, the most common method applied to the automotive three-phase lowvoltage MOSFET driver circuit is the voltage from the drain to the source monitoring [26]- [30].…”

Section: Introductionmentioning

confidence: 99%

Online Short-Circuit Protection Strategy of an Electric Powerpack for Electric Oil Pump Applications

2021

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With the trend towards the miniaturisation and electrification of automotive components, the electric oil pump (EOP) is generally designed as an integrated powerpack in which a motor and an electronic control unit (ECU) are combined into an integrated system, with the electronic components of the ECU exposed to harsher temperature environments. The critical weakness of the traditional design is short-circuit failures, and the most common protection method is monitoring. However, this method cannot predict the accurate protection current, indicating that the fault detection level and short-circuit current (SCC) may change depending on the operating temperature and load condition to which the devices are subject. In this case, switching devices can be destroyed or deteriorated if they are unexpectedly placed outside of the protection range. This study proposes an online short-circuit protection method in which the optimal fault threshold can be controlled in real time, in accordance with changes in temperature and load conditions. To this end, this study investigates the cause of fluctuations in SCC and analyses the protection range and qualification time for SCC through worst-case analysis. To determine the optimal fault threshold, the SCC waveform is estimated through circuit analysis and a method of estimating ( ), which is the cause of SCC fluctuation, is proposed based on simulation and experimental data. Finally, according to ( ), optimal thresholds are derived and the proposed methods are experimentally-verified. It is found that the SCC could be predicted and managed within the protection range by the proposed new protection method.INDEX TERMS Automotive electric powerpack, diagnosis, electric oil pump, gate drive circuit, junction temperature, optimal fault threshold, short-circuit protection, short-circuit current waveform.

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“…1,2 In addition to providing modules with current detection function by incorporating sense elements into semiconductor elements, there are other methods of current detection using shunt resistors, Rogowski coils, or CTs (Current Transformers). 3,4 Modules provided with current detection function require using IGBTs or MOS-FETs 5,6 equipped with respective sense elements. 7 The use of shunt resistors is advantageous in that current flowing in a module can be directly measured; however, main current flows in a shunt resistor, thus becoming yet another loss source, while inductance increases.…”

Section: Introductionmentioning

confidence: 99%

Current detection circuit in multiple parallel connection circuit of high‐power semiconductor modules

Katoh

Nagasu

Suzuki

et al. 2021

Electrical Engineering Japan

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We are developing current-detection technology that directly measures the main current of a high-power semiconductor module using the wiring inductance of the module. In a previous study, we proposed a circuit that detects current by integrating the voltage generated in the wiring inductance between the sense emitter and emitter terminals of the IGBT (Insulated Gate Bipolar Transistor) module. In this study, we developed a total current detection scheme for parallelconnected modules. The basic principle of this scheme is that the total current can be obtained by the total of each voltage generated on the wiring inductance of each module. It was realized by using only one integrating circuit. A challenge for this study was avoiding reflection caused by impedance mismatch. We addressed this by adding a termination resistance with the same value as the characteristic impedance.

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A Dead-Time-Controlled Gate Driver Using Current-Sense FET Integrated in SiC MOSFET

Cited by 21 publications

References 22 publications

Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit

Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit

Online Short-Circuit Protection Strategy of an Electric Powerpack for Electric Oil Pump Applications

Current detection circuit in multiple parallel connection circuit of high‐power semiconductor modules

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