A DC Model of the Planar Dual‐Gated FD‐SOI MOSFET that Captures the Effects of High Biases and HALO

Abstract

No models exist for fully depleted silicon-on-insulator (FD-SOI) metal-oxidesilicon field-effect-transistors (MOSFETs) that operate at high currents and voltages. Operation at high currents and voltages dictates the radio-frequency (rf ) output power that such devices can deliver and transmit from the particular rf-integrated circuits used in today's cellular phones. In this work, a first order dc model for FD-SOI MOSFETs that are specifically designated to operate at high biases and large rf swings is presented. These devices typically incorporate HALO and body-tied-source (BTS), which enable much higher biases to be applied to the gate and drain and allow larger rf swings. They also employ dual-gated designs that further reduce the threshold voltage and increase the current. Although the newly established model accurately replicates the general dc behavior of any FD-SOI MOSFET that incorporates HALO and BTS, it is specifically tailored to an innovative and recently patented device structure for FD-SOI MOSFET. The new structure adopts an improved and unique design for BTS and HALO that most effectively filters the impact-ionization current to BTS and improves the device performance. New design rules that enable the designs of areaefficient layouts for FD-SOI MOSFETs that incorporate the HALO and BTS are also presented. status solidi physica a Field-Effect-Transistors www.pss-a.com

Профилирование Компонент Подвижности Вблизи Гетерограниц Тонких Пленок Кремния

“…Поэтому одной из ключевых задач для широкого класса приборов на основе пленок является определение и контроль параметров внутренней ГР. Эта проблема особенно актуальна для тонкопленочных структур, в которых потенциалы на противоположных ГР пленки взаимосвязаны (наблюдается так называемый coupling-эффект [9][10][11]). Поэтому разработка методов независимой характеризации свойств ГР тонкопленочных структур имеет особое значение.…”