A dc and microwave comparison of GaAs MESFET's on GaAs and Si substrates

Fischer, R.; Chand, Naresh; Kopp, W.; Peng, C. K.; Morkoç̌, H.; Gleason, K.R.; Scheitlin, D.

doi:10.1109/t-ed.1986.22467

Cited by 62 publications

(4 citation statements)

References 16 publications

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“…With appropriate growth conditions, including tilted substrates [4], it is possible to grow good quality GaAs on Si (but with a high density of interface dislocations) and a wide range of devices have been demonstrated. These include FET [88], solar cell [89], medium scale integration [90], and GaAs quantum well heterostructure (QWH) laser, with cw operation at 300 K [91]. The long-term stability of GaAs on Si has however still to be proven; as evidence of this problem, the threshold current of the cw QWH laser rose by 50% over 90 min of operation.…”

Section: Gaas On Simentioning

confidence: 99%

Valence band engineering in strained-layer structures

O’Reilly

1989

Semicond. Sci. Technol.

405

140

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It is now possible to grow high-quality strained-layer superlattices, in which individual layers are composed of semiconductor materials which would normally have significantly different lattice constants. Strained structures open new possibilities for band-structure engineering and applications, but place even higher demands on crystal growth techniques.In this Review, we first describe some of the growth that has been achieved and the theoretical and experimental limits on good quality growth. We then discuss in detail the electronic structure of strained quantum wells, and in particular the possibility of valence band engineering in strained layers. Axial strain splits the degeneracy of the light-and heavy-hole zone centre states, accessing a range of subband structures, including the possibility of the highest band being light-hole-like, and of holes with electron-like zone centre masses. We next describe the experimental evidence confirming such subband structures.This strain-based band engineering suggests new device applications, including high hole mobility transistors and low threshold current, longwavelength lasers. We review what has been achieved in respect of the main proposed device applications to date. Strained layers are also of interest for the new materials combinations which they allow. We briefly overview some of the materials-based advantages, and conclude that strained layers will continue to attract significant attention.

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Section: Gaas On Simentioning

confidence: 99%

Valence band engineering in strained-layer structures

O’Reilly

1989

Semicond. Sci. Technol.

405

140

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“…Fischer et al (23] found minimal sidegating effects for MESFETs, at least in comparison with similar devices fabricated on GaAs substrates.…”

Section: Fetsmentioning

confidence: 93%

“…A subsequent report [301 presented microwave characterization of such devices; a current gain cutoff frequency, ft, of 15 GHz and fmax= 23 GHz was obtained. The microwave results were almost identical to those obtained from devices on conventional GaAs substrates.…”

Section: Modfetsmentioning

confidence: 99%

Epitaxial GaAs on Si: Progress and Potential Applications

Shaw

1987

MRS Proc.

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Recent successes, such as the demonstration of a iK SRAM, have established epitaxial GaAs on Si substrates as a promising technology rather than a device designer's dream. For the first time we can seriously consider combining the individual electronic and optical properties of GaAs and Si within a single epitaxial structure. Applications for GaAs on Si range from those that simply utilize the Si as a low-cost, large-area passive substrate with superior strength and thermal conductivity to the long-sought multifunction integrated circuits where Si and III-V components are integrated within a single monolithic chip. This paper will attempt to provide a realistic appraisal of the potential applications of epitaxial GaAs on Si with emphasis on the special demands imposed by each application and barriers that must be circumvented.

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“…1) The primary difficulty associated with this technology is the 4% lattice mismatch between GaAs and Si. A number of majority carrier devices have been reported using this technology such as field-effect transistors (FET's) 2) and high electron mobility transistors (HEMT's). 3,4) However, at present, minority carrier device applications are rather few, as these devices are severely limited by fairly short minority carrier lifetimes compared to epitaxial GaAs grown on GaAs substrates.…”

Section: Introductionmentioning

confidence: 99%

Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS₂Treatment

Arokiaraj¹,

Soga²,

Jimbo³

1999

Jpn. J. Appl. Phys.

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The effect of selenium sulphide (SeS 2 ) treatment for GaAs grown on Si has been studied. The surface and bulk properties such as the photoluminscence intensity and minority carrier life-time have been significantly increased. The PL intensity showed a two fold and four fold increase for the as-passivated, passivated and annealed samples. It is proposed that the passivation on the surface occurs by means of sulphur and selenium atoms. The bulk passivation is by means of diffusion of Se into the bulk of the epilayer. Additional steps of annealing increased the minority carrier life time thereby reducing the recombination velocity and also indiffusion of Se helps to passivate the buried defects such as As Ga in the double heterostructures. Results obtained by X-ray photoelectron spectroscopy (XPS) reveal that sulfides and selenides reside on the outermost surface and only gallium based selenides are in the bulk of the GaAs layer.

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A dc and microwave comparison of GaAs MESFET's on GaAs and Si substrates

Cited by 62 publications

References 16 publications

Valence band engineering in strained-layer structures

Valence band engineering in strained-layer structures

Epitaxial GaAs on Si: Progress and Potential Applications

Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS₂Treatment

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A dc and microwave comparison of GaAs MESFET's on GaAs and Si substrates

Cited by 62 publications

References 16 publications

Valence band engineering in strained-layer structures

Valence band engineering in strained-layer structures

Epitaxial GaAs on Si: Progress and Potential Applications

Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS2Treatment

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Product

Resources

About

Surface and Bulk Passivation effect of GaAs grown on Si Substrates by SeS₂Treatment