A DC analytical AlGaN/GaN HEMT model for transistor characterisation

Kuchta, Dawid; Wojtasiak, Wojciech

doi:10.1109/mikon.2016.7492083

Cited by 1 publication

(1 citation statement)

References 8 publications

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“…However, doped GaN suffers from carrier mobility degradation due to the scattering of charged dopant centers, which restricts their high power processing ability. − To overcome this issue, high electron mobility transistors (HEMTs) based on modulation doped AlGaN/GaN heterojunctions have been studied for more than two decades . Because it enables spatially separating carriers from ionic impurities to reduce/eliminate scatterings, high-density 2DEG confined in the quantum well at the local heterointerface possesses significantly enhanced mobility, which is desirable for devices working at high speeds with low noise. ,, Moreover, AlGaN/GaN heterostructures own stronger intrinsic polarizations, leading to the 2DEG value being 12 times better than that of GaAs or InP HEMTs, which makes them more competitive for microwave and millimeter-wave applications …”

Section: Introductionmentioning

confidence: 99%

a-Axis GaN/AlN/AlGaN Core–Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors

Song

Wang

et al. 2017

ACS Appl. Mater. Interfaces

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Micro/nanowire-based devices have been envisioned as a promising new route toward improved electronic and optoelectronic applications, which attracts considerable research interests. However, suffering from applicable strategies to synthesize uniform core-shell structures to meet the requirement for the investigations of electrical transport behaviors along the length direction or high electron mobility transistor (HEMT) devices, heterojunction wire-based electronics have been explored limitedly. In the present work, GaN/AlN/AlGaN core-shell heterojunction microwires on patterned Si substrates were synthesized without any catalyst via metalorganic chemical vapor deposition. The as-synthesized microwires had low dislocation, sharp, and uniform heterojunction interfaces. Electrical transport performances were evaluated by fabricating HEMTs on the heterojunction microwire channels. Results demonstrated that a normally off operation was achieved with a threshold voltage of 1.4 V, a high on/off current ratio of 10, a transconductance of 165 mS/mm, and a low subthreshold swing of 81 mV/dec. The normally off operation may attribute to the weak polarization along semipolar facets of the heterojunction, which leads to weak constrain of 2DEG.

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