A Damping Scheme for Switching Ringing of Full SiC MOSFET by Air Core PCB Circuit

Kim, Jaesuk; Shin, Dong-Ho; Sul, Seung-Ki

doi:10.1109/tpel.2017.2731861

Cited by 38 publications

(26 citation statements)

References 20 publications

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“…On the other hand, the rotor flux can be expressed as: (11) and after discretization the rotor flux can be calculated by:…”

Section: B T5mlc Modellingmentioning

confidence: 99%

“…Nevertheless, this fast response SiC semiconductors makes ringing and spikes in the generated voltages in power circuits and printed circuit boards (PCBs). This electromagnetic interference (EMI) issue can be solved by design a prober gate driver circuit and avoid high stray inductance in the PCB design [11]. Hence, SiC MOSFETs technology use, in particular for advanced MLC topologies, needs quit deep investigations [12]- [14].…”

Section: Introductionmentioning

confidence: 99%

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Design, Implementation and Control of a SiC-Based T5MLC Induction Drive System

Salem

2020

IEEE Access

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This paper presents and evaluate a prototype of an advanced topology of five-level T-type MLC, namely ''T5MLC'', implemented within a complete AC induction drive. The evaluation is based on the ability of balancing the converter DC link capacitor voltages, the torque and flux ripples reduction of the induction motor under control, the harmonic analysis and the efficiency of the inverter and the overall drive system. The converter implementation and design considerations using Silicon Carbide (SiC) discrete MOSFETs are discussed. The operation and the analytical model of T5MLC using switching-functions are presented. The model predictive control (MPC), as a preferred AC drive control approach, is selected to adapt the machine torque and flux, and to balance the DC link capacitor voltages. The T5MLC drive system is tested at different scenarios; i.e. suddenly load changing and speed reversal, to ensure the converter capability and excellent performance in AC drive applications. The experimental results show that the MPC could achieve an excellent performance in terms of low harmonic distortions, reduced flux and torque ripples and the ability of balanced DC link capacitors. In addition, the loss analysis showed that the T5MLC is 5.5 % to 24.8 % efficient compared to dual T-type MLC at different loading conditions.

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“…On the other hand, the rotor flux can be expressed as: (11) and after discretization the rotor flux can be calculated by:…”

Section: B T5mlc Modellingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design, Implementation and Control of a SiC-Based T5MLC Induction Drive System

Salem

2020

IEEE Access

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“…According to (12), the range of C X value can be calculated analytically in terms of the allowable introduced delay. Equation (12) can be used as a guideline for selecting the value of C X .…”

Section: Uto Suppressionmentioning

confidence: 99%

“…The switching behavior of WBG devices, such as Silicon Carbide (SiC) and Gallium Nitride (GaN) FETs (Field Effect Transistors), has attracted considerable research attention. There are basically three issues concerning WBG device switching behavior currently being considered in research literature [3][4][5][6][7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Analysis and Suppression of Unwanted Turn-On and Parasitic Oscillation in SiC JFET-Based Bi-Directional Switches

Wang

Yang

et al. 2018

Electronics

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Silicon Carbide (SiC)-based Bi-Directional Switches (BDS) have great potential in the construction of several power electronic circuits including multi-level converters, solid-state breakers, matrix converters, HERIC (high efficient and reliable inverter concept) photovoltaic grid-connected inverters and so on. In this paper, two issues with the application of SiC-based BDSs, namely, unwanted turn-on and parasitic oscillation, are deeply investigated. To eliminate unwanted turn-on, it is proposed to add a capacitor (C X ) paralleled at the signal input port of the driver IC (integrated circuit) and the capacitance range of C X is also analytically derived to guide the selection of C X . To mitigate parasitic oscillation, a combinational method, which combines a snubber capacitor (C J ) paralleled with the JFET (Junction Field Effect Transistor) and a ferrite ring connected in series with the power line, is proposed. It is verified that the use of C J mainly improves the turn-off transient and the use of a ferrite ring damps the current oscillation during the turn-on transient significantly. The effects of the proposed methods have been demonstrated by theoretical analysis and verified by experimental results.

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“…The enhancement in the switching speed can reduce the switching loss, thus achieving high efficiency or higher switching frequency [8,9]. With higher switching frequency, the converter power density can be improved because of the reduction of passive components such as dc-link capacitors and bulky filter inductors [10][11][12]. The high temperature capability will further improve the power density due to the reduced cooling requirement [13].…”

Section: Introductionmentioning

confidence: 99%

Experimental Evaluation of SiC Mosfets in Comparison to Si IGBTs in a Soft-Switching Converter

Zhou

Yuan

2020

IEEE Trans. on Ind. Applicat.

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SiC MOSFETs have shown superior characteristics to Si IGBTs, bringing in significant performance improvement such as enabling more compact, higher efficiency converters that are not feasible with conventional Si IGBTs. Currently, there is a lack of systematic and conclusive investigation into soft-switching inverters using SiC MOSFETs in comparison to Si IGBTs. This paper, therefore, presents a comparative evaluation of a softswitching inverter, i.e. the auxiliary resonant commutated pole inverter (ARCPI) using SiC MOSFETs or Si IGBTs. The switching transition, switching device current stress, neutral point ripple current, electromagnetic interference (EMI), efficiency and cost are compared on identical ARCPI setups, i.e. with the same PCBs and under identical driving conditions (gate drivers). Experimental results show that the ARCPI using SiC MOSFETs has better performance than that using Si IGBTs due to its faster switching speed. Firstly, the ARCPI using SiC MOSFETs performs full zero-voltage switching and the switching transition behaviour is more predictable. Unlike Si IGBTs, SiC MOSFETs have no turn-off tail current and forward voltage drop during switching transitions. Secondly, the ARCPI using SiC MOSFETs endures less current stress and smaller ripple current in dc-link capacitors. Thirdly, the ARCPI using SiC MOSFETs exhibits better EMI performance and higher efficiency. Specifically, a maximum 20 dBμV harmonic reduction can be achieved around 800 kHz and a 3.1% improvement in efficiency can be achieved at 6 kW.

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A Damping Scheme for Switching Ringing of Full SiC MOSFET by Air Core PCB Circuit

Cited by 38 publications

References 20 publications

Design, Implementation and Control of a SiC-Based T5MLC Induction Drive System

Design, Implementation and Control of a SiC-Based T5MLC Induction Drive System

Analysis and Suppression of Unwanted Turn-On and Parasitic Oscillation in SiC JFET-Based Bi-Directional Switches

Experimental Evaluation of SiC Mosfets in Comparison to Si IGBTs in a Soft-Switching Converter

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