“…P-type doping-intrinsic-n-type-doping (PIN) In 0.53 Ga 0.47 As/InP back-illuminated focal plane arrays (FPAs) have attracted extensive attention because of their low dark currents, high detectivity, high quantum efficiency, and good anti-radiation characteristics in uncooled conditions [ 1 , 2 ]. In addition, InGaAs FPA detectors have been widely used in applications in aviation safety, biomedicine, camouflage recognition, night vision, and other fields [ 3 , 4 , 5 ]. Recently, extensive research has been conducted on the extension of the response spectrum from short wavelength infrared (SWIR) to visible light (VIS) with InP substrate removal [ 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ].…”