A Current-Mode, Low Out-of-Band Noise LTE Transmitter With a Class-A/B Power Mixer

Codega, Nicola; Rossi, Paolo; Pirola, Alberto; Liscidini, Antonio; Castello, R.

doi:10.1109/jssc.2014.2315643

Cited by 42 publications

(10 citation statements)

References 10 publications

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“…In order to save the power, passive voltage mixers driven by 25% and 50% duty-cycle LOs are employed in the dual bands, respectively. In Sub-GHz band, the mixer equivalent input impedance can be given by [35]:…”

Section: B Transmitter Passive Voltage Modulatorsmentioning

confidence: 99%

A Fully-Integrated Reconfigurable Dual-Band Transceiver for Short Range Wireless Communications in 180 nm CMOS

Meng

Yin

et al. 2015

IEEE J. Solid-State Circuits

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?? 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.A fully-integrated reconfigurable dual-band (760-960 MHz and 2.4-2.5 GHz) transceiver (TRX) for short range wireless communications is presented. The TRX consists of two individually-optimized RF front-ends for each band and one shared power-scalable analog baseband. The sub-GHz receiver has achieved the maximum 75 dBc 3rd-order harmonic rejection ratio (HRR3) by inserting a Q-enhanced notch filtering RF amplifier (RFA). In 2.4 GHz band, a single-ended-to-differential RFA with gain/phase imbalance compensation is proposed in the receiver. A ???? fractional-N PLL frequency synthesizer with two switchable Class-C VCOs is employed to provide the LOs. Moreover, the integrated multi-mode PAs achieve the output P1dB (OP1dB) of 16.3 dBm and 14.1 dBm with both 25% PAE for sub-GHz and 2.4 GHz bands, respectively. A power-control loop is proposed to detect the input signal PAPR in real-time and flexibly reconfigure the PA's operation modes to enhance the back-off efficiency. With this proposed technique, the PAE of the sub-GHz PA is improved by x3.24 and x1.41 at 9 dB and 3 dB back-off powers, respectively, and the PAE of the 2.4 GHz PA is improved by x2.17 at 6 dB back-off power. The presented transceiver has achieved comparable or even better performance in terms of noise figure, HRR, OP1dB and power efficiency compared with the state-of-the-art

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Section: B Transmitter Passive Voltage Modulatorsmentioning

confidence: 99%

A Fully-Integrated Reconfigurable Dual-Band Transceiver for Short Range Wireless Communications in 180 nm CMOS

Meng

Yin

et al. 2015

IEEE J. Solid-State Circuits

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“…Furthermore, to achieve high linearity and gain, many CMOS mixers are designed by using different linearity techniques such as a dual transconductance (G m ) boosting path along with dual n/PMOS switches [28], a cascode folded mixer [29], the insertion of source-degenerated resistors [30], a class-AB amplifier G m stage [31][32][33], employing a diode linearity technique [34] and integrating high-order harmonic termination [35]. All these linearity techniques either make the mixer circuit complex or lower the gain.…”

Section: Related Literature Surveymentioning

confidence: 99%

Design and Analysis of a Novel 24 GHz Up-Conversion Mixer with Improved Derivative Super-Position Linearizer Technique for 5G Applications

Siddique

Delwar

Behera

et al. 2021

Sensors

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A 24 GHz high linear, high-gain up-conversion mixer is realized for fifth-generation (5G) applications in the 65 nm CMOS process. The mixer’s linearity is increased by applying an Improved Derivative Super-Position (I-DS) technique cascaded between the mixer’s transconductance and switching stage. The high gain and stability of amplifiers in the transconductance stage of the mixer are achieved using novel tunable capacitive cross-coupled common source (TCC-CS) transistors. Using the I-DS, the third-order non-linear coefficient of current is closed to zero, enhancing the linearity. Additionally, a TCC-CS, which is realized by varactors, neutralizes the gate-to-drain parasitic capacitance (Cgd) of transistors in the transconductance stage of the mixer and contributes to the improvement of the gain and stability of the mixer. The measured 1 dB compression point OP1dB of the designed mixer is 4.1 dBm and IP1dB is 0.67 dBm at 24 GHz. The conversion gain of 4.1 dB at 24 GHz and 3.2 ± 0.9 dB, from 20 to 30 GHz is achieved in the designed mixer. Furthermore, a noise figure of 3.8 dB is noted at 24 GHz. The power consumption of the mixer is 4.9 mW at 1.2 V, while the chip area of the designed mixer is 0.4 mm2.

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“…The mixer is the same as the one used in [6]- [7] i.e. a Gilbert like cell where, however, the switching devices are operated in the linear region.…”

Section: B Output Closed-loop Stagementioning

confidence: 99%

“…In the first case, the most promising approach operates entirely in voltage-mode and is implemented with a passive up-converter driven by a filter and followed by pre-power amplifier (PPA) [1], [2]. In the second case, the standard solution is based on a current-mode power mixer, which has also the role of a prepower amplifier [3][4][5][6][7]. High power efficiency and low noise emission in the receive band (for FDD) mandate the use of class A/B solution, at least for the power stage.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A low power/noise emission LTE fully class A/B transmitter with a programmable output balun

Girard

Codega²,

Castello

2014

2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS)

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A current-mode transmitter for multi-standard wireless communications (including LTE) is presented. To limit both current consumption and RX-band noise a complete class A/B approach (from the DAC to the up-converter) is followed. The circuit is made up of three portions: a baseband that includes class B DAC and a second order low-pass filter (an active first order and a passive first order) combined with a class A/B up-converter. For LTE10 the current consumption (from a 1.8V regulated supply) is 47.5mW at 0dBm and 27.37mW at -6dBm output power respectively. The complete transmitter gives -160.5dBc/Hz RX-band noise injection at 30MHz offset (band 5 for LTE 10). I.978-1-4799-4242-8/14/$31.00 c 2014 IEEE

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A Current-Mode, Low Out-of-Band Noise LTE Transmitter With a Class-A/B Power Mixer

Cited by 42 publications

References 10 publications

A Fully-Integrated Reconfigurable Dual-Band Transceiver for Short Range Wireless Communications in 180 nm CMOS

A Fully-Integrated Reconfigurable Dual-Band Transceiver for Short Range Wireless Communications in 180 nm CMOS

Design and Analysis of a Novel 24 GHz Up-Conversion Mixer with Improved Derivative Super-Position Linearizer Technique for 5G Applications

A low power/noise emission LTE fully class A/B transmitter with a programmable output balun

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