A Cu-based alloyed Ohmic contact system on n-type GaAs

Chen, Ke Shian; Chang, Edward Yi; Lin, Chia Ching; Lee, Cheng Shih; Huang, Wei; Lee, Ching-Ting

doi:10.1063/1.2819687

Cited by 7 publications

(4 citation statements)

References 13 publications

(3 reference statements)

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“…For the sake of completeness, bulk Cu shows a resistivity of 1.7×10 −8 Ω m [25]. Compared to literature at first glance, the value of 8 mΩ cm 2 for the achieved contact resistivity seems to be high, in particular when comparing it to reported values for Cu in the range of 10 -2 -10 -4 mΩ cm 2 [43][44][45][46][47]. However, these low resistivity values have not been realized with Cu NP inks but were found for Cu alloys combined with an additional barrier layer, the latter of which is needed due to the high diffusion rate of Cu in GaAs [15].…”

Section: Sintering Methods Evaluationmentioning

confidence: 63%

Ohmic contact formation for inkjet-printed nanoparticle copper inks on highly doped GaAs

et al. 2021

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GaAs compound-based electronics attracted significant interest due to unique properties of GaAs like high electron mobility, high saturated electron velocity and low sensitivity to heat. However, GaAs compound-based electronics demand a significant decrease in their manufacturing costs to be a good competitor in the commercial markets. In this context, copper-based nanoparticle (NP) inks represent one of the most cost-effective metal inks as a proper candidate to be deposited as contact grids on GaAs. In addition, Inkjet-printing, as a low-cost back-end of the line process, is a flexible manufacturing method to deposit copper NP ink on GaAs. These printed copper NP structures need to be uncapped and fused via a sintering method in order to become conductive and form an ohmic contact with low contact resistivity. The main challenge for uncapping a copper-based NP ink is its rapid oxidation potential. Laser sintering, as a fast uncapping method for NPs, reduces the oxidation of uncapped copper. The critical point to combine these two well-known industrial methods of inkjet printing and laser sintering is to adjust the printing features and laser sintering power in a way that as much copper as possible is uncapped resulting in minimum contact resistivity and high conductivity. In this research, copper ink contact grids were deposited on n-doped GaAs by inkjet-printing. The printed copper ink was converted to a copper grid via applying the optimized settings of a picosecond laser. As a result, an ohmic copper on GaAs contact with a low contact resistivity (8 mΩ cm2) was realized successfully.

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Section: Sintering Methods Evaluationmentioning

confidence: 63%

Ohmic contact formation for inkjet-printed nanoparticle copper inks on highly doped GaAs

et al. 2021

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“…5/B) substrate. The other possible solution also with Cu is Pd/Ge/Cu metallization on n-GaAs substrate [40]. This paper descibes an experiment annealing in N gas environment for 20 minutes between 150 o C and 400 o C. The authors examined the resistance of the contact as a function of annealing temperature with different Pd (Fig.…”

Section: Metallizationmentioning

confidence: 99%

Contact Problems in GaAs-based Solar Cells

Ürmös¹,

Farkas²,

Dobos³

et al. 2018

ACTA POLYTECH HUNG

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The present work deals with contact problems of GaAs-based solar cells. In the introduction the most basic GaAs-based solar cell structures are introduced. Then, the energy and electronic properties are investigated. In the third part of this publication, the technological aspects of the metallization are discussed. Here the surface patterns are investigated, that are formed at the surface of the Au/GaAs and Au/TiN/GaAs material systems, as the effect of the annealing process. The further aim of these investigations to investigate, how the properties of ohmic contact depends on the properties of the material system. If these relations are known, the relationships between different morphologies and their electric qualities will be also known.

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“…This is largely due to the lack of knowledge on the subject. Most of the studies published to date are devoted to the development of technology for the production of separate elements of MMIC by using Cu metallization: ohmic and barrier contacts of transistors [7]- [10], interconnects [11], [12], or backside metallization [13]. Studies [14], [15] address the issues of creating GaAs transistors with fully copper metallization.…”

Section: Introductionmentioning

confidence: 99%

A Gold Free Aluminum Metalized GaAs PHEMT With Copper Based Air Bridges and Backside

Erofeev¹,

Arykov²,

Anishchenko³

et al. 2013

IEEE J. Electron Devices Soc.

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This paper presents the results of electrical performance studies of the newly developed GaAs pHEMT transistors with Al-based metallization of the ohmic and barrier contacts, and fully copper metallization of interconnects, air bridges, and backside. The transistors exhibited a source-drain saturation current of I dss = 280 mA/mm and a maximum transconductance of g m = 450 mS/mm at U ds = 1.5 V. The current cut off frequency for transistors with 600 μm total gate width was 80 GHz at U ds = 1.5 V and U gs = −0.35 V, and the power gain limiting frequency was 100 GHz. Output power at 1 dB gain compression with matched input and output load an impedance was P 1db = 26 dBm or 670 mW/mm at an efficiency level of about 28% and the transistor gain G = 11 dB. Measurements were performed at U ds = 8 V, I ds = 1/3 of I dss at 12 GHz. The obtained results demonstrate the promise of Al and Cu metallization in the low cost manufacture of microwave transistors and monolithic integrated circuits based on them.

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A Cu-based alloyed Ohmic contact system on n-type GaAs

Cited by 7 publications

References 13 publications

Ohmic contact formation for inkjet-printed nanoparticle copper inks on highly doped GaAs

Ohmic contact formation for inkjet-printed nanoparticle copper inks on highly doped GaAs

Contact Problems in GaAs-based Solar Cells

A Gold Free Aluminum Metalized GaAs PHEMT With Copper Based Air Bridges and Backside

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