A cross-sectional transmission electron microscopy study of silicide growth kinetics in the Cr/(100)Si system at 425 °C

Natan, Menachem; Duncan, S.; Byer, N. E.

doi:10.1063/1.333399

Cited by 17 publications

(6 citation statements)

References 8 publications

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“…From the results, we see that Lϭ0. 15 and C 0 ϭ0.3 wt % are a pair of the better-fitted values to the experimental data for intermetallic compound growth at 200°C. Although the experimental data have some deviation from the t 1/3 growth, the agreement seems reasonable.…”

Section: B Comparison Of Model With Experimental Resultsmentioning

confidence: 99%

“…From the results of calculation, the model is better fitted to the experimental data when Lϭ0. 15 and C 0 ϭ0.3 wt % for compound growth at 200°C. The activation energy for Cu consumption in the soldering reaction was determined.…”

Section: Discussionmentioning

confidence: 99%

“…This is generally true in reacting a bilayer of metals or a metal on semiconductors. 15,16 The intermetallic compounds between the reactants become diffusion barriers, resulting in a diffusion-controlled layer growth. In certain cases, interfacial-controlled layer growth can take place.…”

Section: A Morphology Of Interfacial Compound Formationmentioning

confidence: 99%

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Kinetic analysis of the soldering reaction between eutectic SnPb alloy and Cu accompanied by ripening

1996

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The wetting reaction of molten eutectic SnPb on Cu leads to Cu-Sn intermetallic compound formation, but not compounds of Cu-Pb since they do not exist. Cu-Sn compounds do not form layered structures between the solder and Cu, rather the Cu 6 Sn 5 phase has grown as scalloplike grains into the molten solder. The scalloplike grains grow larger but fewer with time, indicating that a ripening reaction has occurred among them. However, the ripening is not a constant volume process since it is accompanied by the soldering reaction. Between the scallop grains, there are molten solder channels extending nearly all the way to the Cu interface. In aging, these channels serve as fast diffusion and dissolution paths of Cu in the solder to feed the reaction. A kinetic analysis of the soldering reaction accompanied by the ripening reaction is given. In the analysis, the growth of the scalloplike grains is supplied by two fluxes: the flux of interfacial reaction and the flux of ripening. The latter was formulated by the Gibbs-Thomson equation. The former was obtained by measuring the rate of consumption of Cu in the reaction. The measurement was carried out by determining the change of the total volume of scalloplike grains ͑and in turn, the Cu content in the grains͒ as a function of time and temperature. A reasonable agreement has been obtained between the calculated scallop-grain growth based on kinetic analysis and the experimentally measured values. A discussion of the Cu consumption rate is given, since it is important for applications in electronic packaging technology.

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Section: B Comparison Of Model With Experimental Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Kinetic analysis of the soldering reaction between eutectic SnPb alloy and Cu accompanied by ripening

1996

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“…Moreover, Natan et al [16,171 found that a parabolic (i.e. diffusions-limited) plot of film thickness versus annealing time fits their data much better than a linear (i.e.…”

Section: Growth and Structure Of Crsi Layersmentioning

confidence: 97%

“…Whereas in [16,171 and in our studies the layers were deposited by sputtering, in [18 to 211 the Cr films were e-beam evaporated. An annealing at 450 "C for 30 min results in 270 nm CrSi, layer thickness for sputtered films, but typically only about 140 nm for e-beam evaporation.…”

Section: Growth and Structure Of Crsi Layersmentioning

confidence: 99%

Growth and Optical Characterization of CrSi₂ Thin Films

Lange

Giehler

Henrion

et al. 1992

Physica Status Solidi (b)

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CrSi, thin films are grown by dc magnetron sputtering of Cr single layers on Si and Cr/Si multi-layer configurations on SiO, and subsequent external annealing. In the optical spectra around the band edge the phonon emission and the absorption branches of the indirect transition at 0.5 eV and the direct transition around 1 eV can be discerned. Spectral features in the reflectivity spectrum at higher energies are discussed on the basis of published density of states calculations. The reflectivity spectrum in the IR region exhibits pronounced structures which can be fitted by a six-oscillator model yielding the TO frequencies, oscillator strengths, and damping constants of the lattice modes. The Raman spectrum shows bands in the 310 to 410 cm-' wave number region.Es wurden CrSi,-Schichten durch Gleichstrom-Magnetron-Sputtern von Cr-Einzelschichten auf Si und Cr/Si-Schichten auf SiO, und nachfolgender externer Temperung hergestellt. In den optischen Spektren im Bereich der Bandkante wurden die Phonon-Emissions-und Absorptions-Zweige des indirekten Ubergangs bei 0,5 eV sowie der direkte Ubergang bei 1 eV erhalten. Die spektrale Abhangigkeit des Reflexionsvermogens bei hoherer Energie wird auf der Grundlage existierender ZustandsdichteBerechnungen diskutiert. Das Reflexionsspektrum im IR-Bereich weist ausgepragte Strukturen auf, die mit Hilfe eines Modells bestehend aus sechs Oszillatoren angepa5t werden konnten, woraus die TO-Frequenzen, Oszillatorstarken und Dampfungskonstanten der Gitterschwingungen ermittelt wurden. Das Raman-Spektrum weist Banden im Wellenzahlbereich von 310 bis 410 cm-' auf.

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4 Diffusion in silicides

Gas¹,

d’Heurle²

Diffusion in Semiconductors

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A cross-sectional transmission electron microscopy study of silicide growth kinetics in the Cr/(100)Si system at 425 °C

Cited by 17 publications

References 8 publications

Kinetic analysis of the soldering reaction between eutectic SnPb alloy and Cu accompanied by ripening

Kinetic analysis of the soldering reaction between eutectic SnPb alloy and Cu accompanied by ripening

Growth and Optical Characterization of CrSi₂ Thin Films

4 Diffusion in silicides

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A cross-sectional transmission electron microscopy study of silicide growth kinetics in the Cr/(100)Si system at 425 °C

Cited by 17 publications

References 8 publications

Kinetic analysis of the soldering reaction between eutectic SnPb alloy and Cu accompanied by ripening

Kinetic analysis of the soldering reaction between eutectic SnPb alloy and Cu accompanied by ripening

Growth and Optical Characterization of CrSi2 Thin Films

4 Diffusion in silicides

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Growth and Optical Characterization of CrSi₂ Thin Films