1985
DOI: 10.1246/bcsj.58.2149
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A Correlation of Electrochemical Oxidation and Ionization Potentials of Group 4B Dimetals

Abstract: Correlations of ionization potentials and electrochemical oxidation potentials for group 4B dimetals were obtained.

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Cited by 31 publications
(8 citation statements)
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“…The origin of the anodic peak at E p ≈ 0.3 V, present in all voltammograms ( Figures 1 -3 Okano and Mochida, 1991) and of hexaalkyldigermanes (1.7 and 1.48 V vs. SCE for Me and Et, respectively; Mochida et al, 1985) is all too high. Another system which might account for this peak is the oxidation of Ph 3 GeH formed either via H-atom abstraction by radical Ph 3 Ge ‧ or by protonation of Ph 3 Ge -(although this last possibility must certainly be ruled out because the second reduction step is reversible for all complexes; cf.…”
Section: Cyclic Voltammetrymentioning
confidence: 85%
“…The origin of the anodic peak at E p ≈ 0.3 V, present in all voltammograms ( Figures 1 -3 Okano and Mochida, 1991) and of hexaalkyldigermanes (1.7 and 1.48 V vs. SCE for Me and Et, respectively; Mochida et al, 1985) is all too high. Another system which might account for this peak is the oxidation of Ph 3 GeH formed either via H-atom abstraction by radical Ph 3 Ge ‧ or by protonation of Ph 3 Ge -(although this last possibility must certainly be ruled out because the second reduction step is reversible for all complexes; cf.…”
Section: Cyclic Voltammetrymentioning
confidence: 85%
“…For steric reasons (repulsion of N-Me and Si-SiMe 3 groups), the N lone pairs of 8 and 9 ( Figure 2 and 4) are practically orthogonal to the Si-N axes so they cannot participate in N→Si dative interaction and form complex 3c-4e internal systems. The HOMO in these cases is mostly formed with n(p z ) electrons of N. Consequently, in oxidative ET, 8 and 9 behave as trialkylamines [ 35 , 42 ] since the ionization potential of CH 3 N(CH 2 -) 2 unit is lower than that of polysilane chains (for oxidation of polysilanes see [ 43 , 44 , 45 , 46 ]). Their two step oxidation—first electron withdrawal from silocane N atom, while second being the oxidation of the oligosilanyl substituent—is thus akin to the oxidation scheme reported for Fc-substituted polysilanes [ 47 ].…”
Section: Resultsmentioning
confidence: 99%
“…In 5 , there are several potential sites of ET: the tetrasilane chain (oligosilanes are oxidizable at E p ≅ 1.3–1.7 V vs. SCE) [ 43 , 44 , 45 , 46 , 50 , 51 , 52 ] and two silatranyl units. Note that a donor effect of the latter might lower the oxidation potential of the connecting Si 4 bridge [ 53 ].…”
Section: Resultsmentioning
confidence: 99%
“…First, we prepared disilanes having pyridyl groups in appropriate positions and measured their oxidation potentials [24,25]. The oxidation potential of 2-pyridylethyl substituted disilane 1b was slightly less positive than hexamethyldisilane 1a .…”
Section: Resultsmentioning
confidence: 99%