2016
DOI: 10.14569/ijacsa.2016.070712
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A Conversion of Empirical MOS Transistor Model Extracted From 180 nm Technology To EKV3.0 Model Using MATLAB

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“…This first step of data declaration ends with the introduction of some technological parameters of the transistors which were needed to evaluate the jitter, the intrinsic and extrinsic capacitances involved in the calculation of the total load capacitance seen at the output of the delay cell. Now, using the results of the identification algorithm discussed in [7], the EKV parameters of the transistors were declared in a three-dimensional space (V D , V S , L). The sizing space in this program was defined in 2D by means of the log vectors q F1 and q F2 varying on a logarithmic scale.…”
Section: Dimensioning Algorithm Of Vcomentioning
confidence: 99%
“…This first step of data declaration ends with the introduction of some technological parameters of the transistors which were needed to evaluate the jitter, the intrinsic and extrinsic capacitances involved in the calculation of the total load capacitance seen at the output of the delay cell. Now, using the results of the identification algorithm discussed in [7], the EKV parameters of the transistors were declared in a three-dimensional space (V D , V S , L). The sizing space in this program was defined in 2D by means of the log vectors q F1 and q F2 varying on a logarithmic scale.…”
Section: Dimensioning Algorithm Of Vcomentioning
confidence: 99%