2018
DOI: 10.1186/s11671-018-2641-z
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A Convenient and Effective Method to Deposit Low-Defect-Density nc-Si:H Thin Film by PECVD

Abstract: Hydrogenated nanocrystalline silicon (nc-Si:H) thin film has received a great deal of attention as a promising material for flat panel display transistors, solar cells, etc. However, the multiphase structure of nc-Si:H leads to many defects. One of the major challenges is how to reduce the defects conveniently. In this work, we developed a simple and effective method to deposit low-defect-density nc-Si:H thin film. This method is simply by tuning the deposition pressure in a high-pressure range in plasma-enhan… Show more

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Cited by 11 publications
(8 citation statements)
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“…Until now, there is no direct correlation found on how the defect density responds to the decreasing thickness of a material. [69][70][71] In comparison with the previous work of Rosenburg on the SiOC monolithic sample, 8 the calculated L a and L D of the SiOC film were of similar magnitude; the dispersed particles giving the largest L a and L D values. The L D calculation followed the assumption that point defects are present on the phases and that the radius around the defect (r A ) where D band scattering takes place is equal to 3.1 nm.…”
Section: Methods Of Characterizationmentioning
confidence: 88%
See 1 more Smart Citation
“…Until now, there is no direct correlation found on how the defect density responds to the decreasing thickness of a material. [69][70][71] In comparison with the previous work of Rosenburg on the SiOC monolithic sample, 8 the calculated L a and L D of the SiOC film were of similar magnitude; the dispersed particles giving the largest L a and L D values. The L D calculation followed the assumption that point defects are present on the phases and that the radius around the defect (r A ) where D band scattering takes place is equal to 3.1 nm.…”
Section: Methods Of Characterizationmentioning
confidence: 88%
“…Conversely, the defect density behaved inversely proportional to the heat-treatment temperature with the C17-1400 thin film sample showing a high degree of steepness on its slope. Until now, there is no direct correlation found on how the defect density responds to the decreasing thickness of a material [69][70][71] . In comparison with the previous work of Rosenburg on the SiOC monolithic sample 8 , the calculated L a and L D of the SiOC film were of similar magnitude; the dispersed particles giving the largest L a and L D values.…”
Section: Accepted Articlementioning
confidence: 99%
“…n trap was determined to be 8.2 × 10 10 cm −3 . This value is even lower than that of polycrystalline Si (10 13 to 10 14 cm −3 ) 32 and CdTe (10 11 –10 13 cm −3 ). 33 At a higher bias, the current showed a quadratic dependence ( I ∝ V 2 ).…”
Section: Resultsmentioning
confidence: 64%
“…Figure 4c shows that the <110>‐textured Cu 2 O prepared by the BSATO method exhibits a much lower n trap of 2.8 × 10 11 cm −3 , compared with the control sample with a n trap of 5.60 × 10 11 cm −3 (Figure S13, Supporting Information). It should be noted that the n trap of these BSATO Cu 2 O quasi‐single crystals is approximately two orders of magnitude lower than that of the lead halide perovskite microcrystalline thin film (10 13 cm −3 ), [ 40 ] and approximately two or three orders of magnitude lower than that of the commercial semiconductors, including Si ( n trap = 10 13 –10 14 cm −3 ), [ 41 ] CdTe ( n trap = 10 11 –10 13 cm −3 ), [ 3 ] and CIGS ( n trap ≈10 13 cm −3 ). [ 42 ]…”
Section: Resultsmentioning
confidence: 99%