Abstract:A calculation is performed of the early stage of adsorption of atomary oxygen on the Si (111) surface in the on-atom (top) position, saturating the dangling bond of the surface silicon atom. By considering the possible presence of a vacancy in the adsorbed oxygen monolayer, it is shown that the basic features of the experimental energy spectrum can be obtained without resorting to the idea of the existence of Si-0-Si bridge structures on the surface. Nevertheless, the results obtained do not contradict such an… Show more
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