“…3a). This method is similar to that used by Cvelbar et al, 11 except that all our measurements were carried out ex situ at room temperature in between oxidation tests. Additionally, the thickness of each stack was measured using an Alpha-Step profilometer.…”
Several bottom electrode systems for ferroelectric oxide thin film deposition onto reactive substrates or reactive metal films have been investigated with respect to chemical barrier properties and contact resistivity. Such electrode systems should not deteriorate by oxidation, and should prevent oxygen diffusion into the underlying base metal. First, the protective performance of Pt, Ru, RuO 2 / Ru and Cr has been evaluated on reactive substances such as W, Zr, Mo and TiN. On most materials, a reactive and passivating metal such as Cr offers protection up to a higher temperature than noble metals. This is explained by preferential oxidation. On Cr, a RuO 2 electrode allowed oxidation resistance to more than 800°C without any Cr diffusion: the RuO 2 serves both as an electrode and as a barrier to Cr. In order to reduce the contact resistance due to the formation of a Cr 2 O 3 film at the RuO 2 / Cr interface, a Ru interlayer was inserted, giving a RuO 2 / Ru / Cr. This combination allowed to maintain a low contact resistance up to 700°C.
“…3a). This method is similar to that used by Cvelbar et al, 11 except that all our measurements were carried out ex situ at room temperature in between oxidation tests. Additionally, the thickness of each stack was measured using an Alpha-Step profilometer.…”
Several bottom electrode systems for ferroelectric oxide thin film deposition onto reactive substrates or reactive metal films have been investigated with respect to chemical barrier properties and contact resistivity. Such electrode systems should not deteriorate by oxidation, and should prevent oxygen diffusion into the underlying base metal. First, the protective performance of Pt, Ru, RuO 2 / Ru and Cr has been evaluated on reactive substances such as W, Zr, Mo and TiN. On most materials, a reactive and passivating metal such as Cr offers protection up to a higher temperature than noble metals. This is explained by preferential oxidation. On Cr, a RuO 2 electrode allowed oxidation resistance to more than 800°C without any Cr diffusion: the RuO 2 serves both as an electrode and as a barrier to Cr. In order to reduce the contact resistance due to the formation of a Cr 2 O 3 film at the RuO 2 / Cr interface, a Ru interlayer was inserted, giving a RuO 2 / Ru / Cr. This combination allowed to maintain a low contact resistance up to 700°C.
“…9) Different methods for evaluation of properties and morphology of oxide films/thin films deposited by sputtering 10) on substrate and due to high temperature were studied previously using TEM, 11) SEM, 12) STM, X-ray diffractometry, 10) and microscopic four-point probe 11) etc. The measurement of resistivity/conductivity of thin films on substrate in the electronics industries by microscopic four-point probe, 13,14) atomic force microscope 15) and four wires in situ 16) are also well known because resistivity is one of the basic electrical properties of conducting films. 16) Previously, local conductivity of thin film on substrate was measured by using microscopic four-point probe through reducing probe spacing below inhomogeneous dimensions/area.…”
Section: Introductionmentioning
confidence: 99%
“…The measurement of resistivity/conductivity of thin films on substrate in the electronics industries by microscopic four-point probe, 13,14) atomic force microscope 15) and four wires in situ 16) are also well known because resistivity is one of the basic electrical properties of conducting films. 16) Previously, local conductivity of thin film on substrate was measured by using microscopic four-point probe through reducing probe spacing below inhomogeneous dimensions/area. 17,18) Therefore, current will pass through only thin film eliminating the contribution of base material from the measurement.…”
This article describes about the nature of potential drops (PDs) on carbon steel (SS400) and stainless steel (SUS304). The experimental results showed the remarkable nature of potential drops on oxidized surface. Direct current PD (DCPD) technique was used to investigate the nature of potential drops on the test surfaces with probe contact time. The nature of PDs on oxidized and oxide scale free surfaces were compared for the same experimental conditions and it is easy to compare the contaminated surface with oxide scale free surface and to decide whether the surface is oxidized or clean. Oxidized test surface is considered as two layers of different resistivities. The effect of two layers on the potential drops was illuminated by electrical image method. Electrical resistivity of oxide scale was determined by DCPD technique on the basis of the two layers of different resistivities model. In an attempt to verify the accuracy and prove the validity of the proposed method, the electrical resistivity is also determined at different probe spacing and all the results are shown to be very proximate to one another.
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