A Concurrent Dual-Band Uneven Doherty Power Amplifier with Frequency-Dependent Input Power Division

Chen, Wenhua; Zhang, Silong; Liu, Youjiang; Liu, Yucheng; Ghannouchi, Fadhel M.

doi:10.1109/tcsi.2013.2268341

Cited by 99 publications

(46 citation statements)

References 30 publications

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“…It is not satisfactory especially when the signals with high peak-to-average power ratio (PAPR) are widely utilized because of the popular usage of non-constant envelope modulation schemes in order to pursue high transmission capacity. To solve the problem, DPA was first proposed by Doherty in 1936 [6] and developed towards several meaningful directions later [7][8][9], and one of them is the dual-band DPA [10][11][12][13][14][15][16], which perfectly meets the requirements of modern communications. In 2010, a dual-band DPA was proposed and focused on the passive structures involved in the DPA design, whose drain efficiencies achieve 45% when the output power is between 33 dBm and 39 dBm at both 2.14 GHz and 3.5 GHz [12].…”

Section: Introductionmentioning

confidence: 99%

Design of a Dual-Band Doherty Power Amplifier Utilizing Simplified Phase Offset-Lines

Zheng¹,

Liu²,

Chen³

et al. 2014

PIER C

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Abstract-This paper proposes a novel design methodology for dual-band Doherty power amplifier (DPA) with simplified offset-lines. The methodology is validated with the design and fabrication of a 10 W GaN based DPA for Global System for Mobile Communications (GSM) and Wideband Code Division Multiple Access (WCDMA) applications at 0.90 GHz and 2.14 GHz, respectively. In the measurement results, the DPA achieves a drain efficiency (DE) of 51.2% with an output power of 37.2 dBm at the 6.5 dB output power back-off (OBO) from the saturated output power at 0.90 GHz, and a DE of 39.9% with an output power of 37.4 dBm at the 6.5 dB OBO at 2.14 GHz. Linearity results using 20 MHz 16 QAM signal show an adjacent channel leakage ratio (ACLR) of −48 dBc and −43 dBc with the average output power of 37.2 dBm and 37 dBm at 0.90 GHz and 2.14 GHz, respectively.

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Section: Introductionmentioning

confidence: 99%

Design of a Dual-Band Doherty Power Amplifier Utilizing Simplified Phase Offset-Lines

Zheng¹,

Liu²,

Chen³

et al. 2014

PIER C

View full text Add to dashboard Cite

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“…While the previous works are mainly focused on the output section design, the DPAs of [53] and [54] point out the importance of the frequency dependence of the input power splitting to compensate for the device gain decrease versus frequency and to correct the auxiliary device turning on. In [53] a three-way dual-band DPA is shown, employing GaN HEMTs.…”

Section: Multi-band Solutionsmentioning

confidence: 99%

“…Efficiencies at 9 dB OBO of 61% and 44% are achieved at 0.9 and 2.31 GHz, respectively, with saturated output power around 46 dBm. In [54], an asymmetrical two-way DPA is presented with 10 W GaN CREE devices, showing at 0.85 and 2.33 GHz an output power of 44 and 42.5 dBm and 6 dB OBO efficiency of 50% and 42%, respectively.…”

Section: Multi-band Solutionsmentioning

confidence: 99%

The Doherty Power Amplifier: Review of Recent Solutions and Trends

Camarchia

Pirola

Quaglia

et al. 2015

IEEE Trans. Microwave Theory Techn.

193

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In this paper, an extensive review of the most up-to-date papers on microwave Doherty power amplifiers is presented. The main applications are discussed, together with the employed semiconductor technologies. The different research trends, all aimed to improve the advantages of the Doherty scheme and to solve its inherent drawbacks, are presented. The first considered topic is the maximization of efficiency and/or linearity, where analog and digital techniques are exploited. Another important trend is the bandwidth enlargement of the Doherty architecture, that involves a large number of papers. Multi-band, multi-mode solutions are also considered, using either fixed or reconfigurable solutions. The final section is dedicated to the most significant Doherty integrated implementations.Index Terms-Doherty power amplifier, gallium arsenide, gallium nitride, linearization, wireless communications.

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“…By contrast, the Doherty is a low-complexity and cost-effective technique that has shown stringent linear specifications with high efficiency over a wide power back-off region [16]. Many Doherty power amplifiers (PAs) have been reported to enhance the average efficiency and the back-off efficiency [16][17][18][19][20][21][22][23][24]. Although the design of Doherty topology is one of the most common solutions for high PAPR applications due to its significant efficiency enhancement at back-off operation [23], it still suffers from efficiency degradation at same output power when compared with the conventional load modulation network.…”

Section: Introductionmentioning

confidence: 99%

A Low-Power CMOS Class-E Chireix RF Outphasing Power Amplifier for WLAN Applications

Zhu

2016

Wireless Pers Commun

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This paper describes the design and implementation of a low-power CMOS class-E Chireix RF outphasing power amplifier (PA) for WLAN applications. The proposed circuit is based on cascode class-E topology with two-stage structure and Chireix power combiner with a floating load. This class-E topology adopts self-biased technique and current-reused technique that avoids using thick-oxide transistors and can enhance the driving ability and power gain. Additionally, the Chireix combiner can reduce the loss of power and improve the efficiency by avoiding the use of isolation resistance. With a 2.5 V power supply, the realized prototype achieved 21.4 dBm of maximum output power and 29.9 % of average power-added efficiency (PAE) at 2.4 GHz. When operated for minimum input levels at 2.5 V, it reached 38.8 dB power gain. For a WLAN OFDM signal with 20 MHz, the error vector magnitude of 3 % is achieved with peak drain efficiency of 62 %. Moreover, the outphasing power amplifier is fully integrated with TSMC 0.18-lm CMOS technology and the chip area including testing pads is 1.07 9 1.17 mm 2 .

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A Concurrent Dual-Band Uneven Doherty Power Amplifier with Frequency-Dependent Input Power Division

Cited by 99 publications

References 30 publications

Design of a Dual-Band Doherty Power Amplifier Utilizing Simplified Phase Offset-Lines

Design of a Dual-Band Doherty Power Amplifier Utilizing Simplified Phase Offset-Lines

The Doherty Power Amplifier: Review of Recent Solutions and Trends

A Low-Power CMOS Class-E Chireix RF Outphasing Power Amplifier for WLAN Applications

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