2011
DOI: 10.1016/j.solidstatesciences.2011.02.012
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A conceptional approach to materials for resistivity switching and thermoelectrics

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Cited by 17 publications
(22 citation statements)
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“…Previously such p-n type conduction switching assisted large change in thermopower was reported in the literature for few chalcogenide-based compounds, only in the last five years. But for the very first time it was observed in perovskite-based oxide materials and also the change in thermopower was larger than the previously reported results, as shown in the comparison 20,21,[98][99][100][101][102] bar chart in Fig. 12.…”
Section: Colossal Change In Thermopowermentioning
confidence: 81%
“…Previously such p-n type conduction switching assisted large change in thermopower was reported in the literature for few chalcogenide-based compounds, only in the last five years. But for the very first time it was observed in perovskite-based oxide materials and also the change in thermopower was larger than the previously reported results, as shown in the comparison 20,21,[98][99][100][101][102] bar chart in Fig. 12.…”
Section: Colossal Change In Thermopowermentioning
confidence: 81%
“… 14 20 Ag 10 Te 4 Br 3 , AgBiSe 2 and AgCuS exhibit reversible p–n–p type conduction switching as a function of temperature, which can have potential applications in temperature controlled/sensitive diodes and transistors. 13 , 14 , 18 , 19 , 21 The p–n–p type conduction switching is highly sensitive to the order–disorder phase transition, evolution of the electronic structures during the phase transition and the carrier type of the material. 17 , 18 Substitution of foreign cations or anions can modulate the electronic structure and carrier transport in a material, which may tune the phase transition temperature.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, anion substituted Ag 10 Te 4 Br 2.8 I 0.2 shows a shift of the p–n–p conduction switching temperature towards room temperature, but the change in the Seebeck coefficient was smaller than that of pristine Ag 10 Te 4 Br 3 . 21 It must be mentioned that AgBiSe 2 shows p–n–p type conduction switching in its nanocrystalline form, 19 but its bulk counterpart does not exhibit such conduction type switching. 16 a Thus the particle or grain size has an important role in the conduction switching property as the electronic band gap of a material is highly sensitive to the crystallite size.…”
Section: Introductionmentioning
confidence: 99%
“…In these materials the conduction switching occurs within a small temperature window of ≤50 K around the transition temperature due to the presence of a semimetallic state during order–disorder structural transition. Although these Ag/Cu based chalcogenide exhibit interesting p–n–p switching but their conduction is dominated by mobile cations(Ag + /Cu + ) in the superionic phase therefore their stability with temperature is an issue of concern . Hence an electronic semiconductor exhibiting conduction switching can be a good choice for application.…”
Section: Comparison Of the Elemental Composition Obtained By Xps And mentioning
confidence: 99%