“… 14 – 20 Ag 10 Te 4 Br 3 , AgBiSe 2 and AgCuS exhibit reversible p–n–p type conduction switching as a function of temperature, which can have potential applications in temperature controlled/sensitive diodes and transistors. 13 , 14 , 18 , 19 , 21 The p–n–p type conduction switching is highly sensitive to the order–disorder phase transition, evolution of the electronic structures during the phase transition and the carrier type of the material. 17 , 18 Substitution of foreign cations or anions can modulate the electronic structure and carrier transport in a material, which may tune the phase transition temperature.…”