2018
DOI: 10.1016/j.tsf.2017.10.043
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A comprehensive study on different silicon-containing interlayers for a-C:H adhesion on ferrous alloys

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Cited by 17 publications
(5 citation statements)
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“…10,19,20 For these systems using a-SiC x :H interlayers, it is reported that delamination occurs more frequently at the outermost interface due to contaminants or undesirable chemical combination, thus proposing a chemical mechanism for adhesion. 10,17,33,34 The interlayer deposition temperature, for example, is related to thermoactivated chemical reactions, where the mobility of chemical species is affected and consequently the thickness of these interlayers. Under specific temperature conditions, chemical reactions can form more stable bonds that favor adhesion such as Si−C, Si− Si, and C-C, and also release more volatile species, such as O 2 and H 2 O, that are harmful for adhesion.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
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“…10,19,20 For these systems using a-SiC x :H interlayers, it is reported that delamination occurs more frequently at the outermost interface due to contaminants or undesirable chemical combination, thus proposing a chemical mechanism for adhesion. 10,17,33,34 The interlayer deposition temperature, for example, is related to thermoactivated chemical reactions, where the mobility of chemical species is affected and consequently the thickness of these interlayers. Under specific temperature conditions, chemical reactions can form more stable bonds that favor adhesion such as Si−C, Si− Si, and C-C, and also release more volatile species, such as O 2 and H 2 O, that are harmful for adhesion.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Spontaneous delamination of a-C and a-C:H thin films occurs when deposition parameters such as low temperatures, low bias voltages or precursors containing silicon with complex molecules are used. ,, For these systems using a-SiC x :H interlayers, it is reported that delamination occurs more frequently at the outermost interface due to contaminants or undesirable chemical combination, thus proposing a chemical mechanism for adhesion. ,,, The interlayer deposition temperature, for example, is related to thermoactivated chemical reactions, where the mobility of chemical species is affected and consequently the thickness of these interlayers. Under specific temperature conditions, chemical reactions can form more stable bonds that favor adhesion such as Si–C, Si–Si, and C-C, and also release more volatile species, such as O 2 and H 2 O, that are harmful for adhesion .…”
Section: Results and Discussionmentioning
confidence: 99%
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“…The surface of the metal contains some alloy elements. Under the influence of high temperature, an oxidation reaction occurs [4]. The most common high-temperature oxidation is the oxide formed by iron and oxygen.…”
Section: High Temperature Oxidation Of Weathering Steelmentioning
confidence: 99%
“…Furthermore, organosilicon films are made from many precursors/methodologies and have a wide range of applications due to the combination of varied properties and the ability to change them . These films have been utilized for atomic oxygen (AO) protective coatings, , water penetration barriers, oxygen and water vapor barriers, anticorrosion protection, biocompatible coatings, solar cells, scratch protection, adhesion promotion, etc. For instance, a 400 nm thick plasma-polymerized hexamethyl­disiloxane (pp-HMDSO) film as a protective coating against AO in the space environment was recently deposited by our group on a 1.2 m wide polyimide surface using plasma-enhanced chemical vapor deposition (PECVD), which demonstrated excellent resistance to AO .…”
Section: Introductionmentioning
confidence: 99%