A comprehensive study of the TiN/Si interface by X-ray photoelectron spectroscopy

Antunes, Vinícius Gabriel; Figueroa, Carlos A.; Alvarez, F.

doi:10.1016/j.apsusc.2018.04.005

Cited by 15 publications

(14 citation statements)

References 28 publications

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“…On Au samples, the spectra are asymmetrical with a tail extending toward higher binding energy, which is consistent with previous research results . Upon deconvoluting of the data using established parameters available in the literature, ,, the following species were assigned: O 2– (Au 2 O) at 531.94 eV contributing to 81.09% of the total O composition and OH at 533.33 eV comprising 18.14% and H 2 O at 534.68 eV responsible for 0.77%. After UV light exposure, we analyzed the data and assigned the following species: O 2– (Au 2 O) peak was found at 532.11 eV, OH at 533.73 eV, and the H 2 O peak at 535.50 eV.…”

Section: Resultssupporting

confidence: 88%

“…On Au samples, the spectra are asymmetrical with a tail extending toward higher binding energy, which is consistent with previous research results. 52 Upon deconvoluting of the data using established parameters available in the literature, 51,52,54 length-to-width ratio, which is one of important parameters related to the bacteria growth. For statistical analysis, at least three samples of each material under each condition were utilized.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…Quantitative surface characterization can provide further understanding of changes caused by UV irradiation of the samples. XPS is a widely utilized surface characterization tool for assessment of surface compositional changes. − Cleaned Au, GaN, and SiO x samples were examined by XPS before exposing them to the UV light as well as after 1 h irradiation. Survey scans were collected and then analyzed to extract the surface chemical composition.…”

Section: Resultsmentioning

confidence: 99%

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Characterization ofPseudomonas aeruginosaFilms on Different Inorganic Surfaces before and after UV Light Exposure

et al. 2018

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The changes of the surface properties of Au, GaN, and SiO after UV light irradiation were used to actively influence the process of formation of Pseudomonas aeruginosa films. The interfacial properties of the substrates were characterized by X-ray photoelectron spectroscopy and atomic force microscopy. The changes in the P. aeruginosa film properties were accessed by analyzing adhesion force maps and quantifying the intracellular Ca concentration. The collected analysis indicates that the alteration of the inorganic materials' surface chemistry can lead to differences in biofilm formation and variable response from P. aeruginosa cells.

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Section: Resultssupporting

confidence: 88%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Characterization ofPseudomonas aeruginosaFilms on Different Inorganic Surfaces before and after UV Light Exposure

et al. 2018

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“…28 Thus, C−Si chemical bonds should be stimulated at the outermost interface a-C:H/a−a-SiC x :H to increase the mechanical adhesion of a-C:H thin films on ferrous alloys. As it is well established, oxygen atoms degrade the adhesion of several thin-film coatings: 48 In the case of a-C:H thin film, adhesion is jeopardized due to the formation of terminal CO and SiO chemical bonds. 28,33 Siliconcontaining interlayers deposited using tetramethylsiline (TMS) confirm that higher contributions of Si−O−Si bonds are promoted at 100 °C deposition temperatures, dramatically degrading the a-C:H thin film adhesion.…”

Section: Resultsmentioning

confidence: 99%

Substrate Bias Voltage Tailoring the Interfacial Chemistry of a-SiC_x:H: A Surprising Improvement in Adhesion of a-C:H Thin Films Deposited on Ferrous Alloys Controlled by Oxygen

Crespi

Leidens

Antunes

et al. 2019

ACS Appl. Mater. Interfaces

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Hydrogenated amorphous carbon thin films (a-C:H) have attracted much attention because of their surprising properties, including ultralow friction coefficients in specific conditions. Adhesion of a-C:H films on ferrous alloys is poor due to chemical and physical aspects, avoiding a widespread application of such a film. One possibility to overcome this drawback is depositing an interlayeran intermediate thin filmbetween the carbon-based coating and the substrate to improve chemical interaction and adhesion. Based on this, interlayers play a key role on a-C:H thin-film adhesion through a better chemical network structure at the outermost layer of the a-SiC x :H interlayer, i.e., the a-C:H/a-SiC x :H interface. However, despite the latest important advances on the subject, the coating adhesion continues being a cumbersome problem since it depends on multifactorial causes. Thus, the purpose of this paper is to report a standard protocol leading to surprising good results based on the control of the interfacial chemical bonding by properly biasing the substrate (between 500 and 800 V) during the a-SiC x :H interlayer deposition at an appropriate low temperature, by using hexamethyldisiloxane as precursor. The interlayers and the outermost interfaces were analyzed by a comprehensive set of techniques, including X-ray photoelectron spectroscopy, glow discharge optical emission spectroscopy, and Fourier transform infrared spectroscopy. Nanoscratch tests, complemented by scanning electron microscopy and energy-dispersive X-ray spectroscopy, were used to evaluate the critical load for delamination to certify and quantify the adhesion improvement. This study was important to identify the chemical local bonding of the elements at the interface and its local environment, including the in-depth chemical composition profile of the coating. An important effect is that the oxygen content decreases on increasing substrate bias voltage, improving the adhesion of the film. This is due to the fact that energetic ion hitting the growing interlayer breaks Si–O and C–O bonds, augmenting the content of Si–C and C–C bonds at the outermost interface of the a-SiC x :H interlayer and enhancing the a-C:H coating adhesion. Moreover, the combination of high bias voltage (800 V) and low temperature (150 °C) during the a-SiC x :H interlayer deposition allows good adhesion of a-C:H thin films due to sputtering of light elements like oxygen. Therefore, an appropriated bias and temperature combination can open new pathways in a-C:H thin-film deposition at low temperatures. These results are particularly interesting for temperature-sensible metal alloys, where well-adhered a-C:H thin films are mandatory for tribological applications.

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“…Antunes et al have shown that a combination of a H 2 atmosphere with ion bombardment (plasma cleaning) favored the bonds between the TiN film and Si substrate. 19 In this paper, the authors showed that even if some single ionized (H 2 + ) species reach the surface, neutral species are major ones. The double ionization (H 2…”

Section: ■ Introductionmentioning

confidence: 99%

Chemisorption Competition between H₂O and H₂ for Sites on the Si Surface under Xe⁺ Ion Bombardment: An XPS Study

2022

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This paper reports the competition of H 2 O (residual) and H 2 by site (defects) on the Si surface, created by Xe + ion bombardment. X-ray photoelectron spectroscopy (XPS) in an ultrahigh vacuum system attached to the sample preparation chamber provided the data for the analyses. As hydrogen cannot be detected by XPS, an indirect method to evaluate the O and H cover ratio was developed. The hydrogen passivation effect obtained by the formation of the Si−H bond due to H 2 chemisorption limits Si−OH and Si−O−Si bonds, which are products of H 2 O dissociation. In addition, the results have shown that Xe + ion bombardment diminished the H 2 chemisorption energy barrier onto Si.

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A comprehensive study of the TiN/Si interface by X-ray photoelectron spectroscopy

Cited by 15 publications

References 28 publications

Characterization ofPseudomonas aeruginosaFilms on Different Inorganic Surfaces before and after UV Light Exposure

Characterization ofPseudomonas aeruginosaFilms on Different Inorganic Surfaces before and after UV Light Exposure

Substrate Bias Voltage Tailoring the Interfacial Chemistry of a-SiC_x:H: A Surprising Improvement in Adhesion of a-C:H Thin Films Deposited on Ferrous Alloys Controlled by Oxygen

Chemisorption Competition between H₂O and H₂ for Sites on the Si Surface under Xe⁺ Ion Bombardment: An XPS Study

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A comprehensive study of the TiN/Si interface by X-ray photoelectron spectroscopy

Cited by 15 publications

References 28 publications

Characterization ofPseudomonas aeruginosaFilms on Different Inorganic Surfaces before and after UV Light Exposure

Characterization ofPseudomonas aeruginosaFilms on Different Inorganic Surfaces before and after UV Light Exposure

Substrate Bias Voltage Tailoring the Interfacial Chemistry of a-SiCx:H: A Surprising Improvement in Adhesion of a-C:H Thin Films Deposited on Ferrous Alloys Controlled by Oxygen

Chemisorption Competition between H2O and H2 for Sites on the Si Surface under Xe+ Ion Bombardment: An XPS Study

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Substrate Bias Voltage Tailoring the Interfacial Chemistry of a-SiC_x:H: A Surprising Improvement in Adhesion of a-C:H Thin Films Deposited on Ferrous Alloys Controlled by Oxygen

Chemisorption Competition between H₂O and H₂ for Sites on the Si Surface under Xe⁺ Ion Bombardment: An XPS Study