A comprehensive review on ZnS: From synthesis to an approach on solar cell

Ummartyotin, Sarute; Infahsaeng, Yingyot

doi:10.1016/j.rser.2015.10.120

Cited by 139 publications

(54 citation statements)

References 86 publications

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“…The structural properties of ZnS are easily to be tailored by means of reducing their dimensions or generating chemical modifications. The ZnS can be designed in several dimensions, ranging from 3D, 2D, 1D structures to 0D structure of quantum dots, where the drastic reduction in the material size change their band structure (the band gap increases as the particle size decreases, with this edge of band splits and create discrete energy levels) [6,7]. On the other hand, the doping of ZnS, has been extensively performed in the last decades determining that the impurity plays a very important role in the efficiency and position of the emission bands [8].…”

Section: Introductionmentioning

confidence: 99%

First principles calculations and experimental study of the optical properties of Ni-doped ZnS

Rodríguez

Zandalazini

Navarro

et al. 2019

Mater. Res. Express

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Zinc sulphide doped with nickel (Ni:ZnS) has many applications in different fields like materials science, electronics, optics, and other industrial applications. Experimentally, a large variety of methods have been developed for Ni:ZnS synthesizing, where the chemical synthesis with capping agent is most successful, but has disadvantages like purity and the low performance. In addition, since there is not also much theoretical information about its features, the electronic and optical response of Ni:ZnS were studied, both experimentally by x-ray diffractometry (XRD), transmission electron microscopy (HR-TEM), and x-ray photoelectron spectroscopy (XPS) and theoretically by means of the density functional theory (DFT) calculations, giving an unified understanding of the electrooptical performance of this compound. In the same way, the importance of the inclusion of Ni impurities in the structure was studied and analyzed by the inclusion of a Hubbard potential in the calculations. We found that the optimal U value for Ni atoms is 4 eV in agreement with experimental results obtained by XPS. The dielectric function (ε 2 ) for pure and doped systems showed that the influence of the Ni atom is mainly given in the range of low energy regions (E<6 eV), where the new peaks are associated to transitions that include the impurity band states.

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Section: Introductionmentioning

confidence: 99%

First principles calculations and experimental study of the optical properties of Ni-doped ZnS

Rodríguez

Zandalazini

Navarro

et al. 2019

Mater. Res. Express

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“…As an environmental‐friendly wide‐bandgap semiconductor, zinc sulfide (ZnS), has recently received its increasing merits on various applications of ultraviolet (UV) optoelectronics devices, solar cells, light‐emitting diodes (LEDs) and photocatalyst owing to its wide bandgap. ZnS is direct semiconductor with a bandgap (∼3.7‐3.77 eV and exciton binding energy ∼39 meV) [2–6] larger than that of ZnO (∼3.3 eV with exciton binding energy ∼60 meV),, which makes it more suitable and flexible for application in UV‐visible optical devices.…”

Section: Figurementioning

confidence: 99%

Optical Study of High Quality c -ZnS Crystals for UV Photodiodes and Photoelectrochemical Applications

Lin

Parasuraman

et al. 2017

ChemistrySelect

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Wide band gap semiconductors are proper candidates for manufacturing UV‐visible electronic devices, photocatalysts and power electronic components. Among them, II–VI ZnS has a high flexibility in tuning energy range as compared to ZnO because of a larger bandgap about 3.7 eV. In this work, a high‐quality {111}‐oriented ZnS crystal of zinc‐blende structure has been successfully grown by chemical vapor transport method using I2 as the transport agent. High‐resolution transmission electron microscopy verifies its crystallinity and crystal orientation, and energy dispersive X‐ray analysis identifies its stoichiometry. Due to the coupling between crystal field and spin orbital in the high quality solid, three band‐edge excitonic transitions of EA=3.745, EB=3.799 and EC=3.881 eV have been detected. An initial metal‐semiconductor‐metal (MSM) Schottky photodiode made by {111}‐ZnS crystal has been assessed. The dark resistivity is about 6.13 MΩ‐cm. Under the irradiation of a 266‐nm laser (power ∼1.6 mW), the photo‐resistivity change (i. e., Δρ/ρdark) reaches 88%. Photo‐catalytic ability of the {111}‐ZnS single crystal was also evaluated using Methyl‐blue degradation. The degradation (normalized concentration change) after 1 hour can reach C/C0≈ 0.47 under irradiation of Xe‐arc lamp. All the experimental results reveal high responsivity of the {111}‐ZnS photodiode and good photocatalytic function of the {111}‐oriented crystal photocatalyst operated in the UV range.

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“…Semiconductor materials ZnS and ZnSe are used for production of focusing elements and windows in optics as well as pressure sensing elements in various mechanical transducers. Owing to their transparency in the atmospheric window (8-14 μm), the ZnS and ZnSe ceramics are designed to protect both IR sensors established on mobile carriers [1,2] and solar cells made of A 2 B 6 [3][4][5][6][7], which are exposed to knocks of dust particles and atmospheric precipitation [8,9]. Because of their well-pronounced fractoluminescent properties, these compounds have application in impact [10] and pressure [11] sensors.…”

Section: Introductionmentioning

confidence: 99%

Impact and indenting damage of CVD-produced ZnS and ZnSe ceramics

Chmel

Dunaev

Sinani

et al. 2020

Mater. Res. Express

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Time series of acoustic emission pulses were excited in ductile ZnS and ZnSe ceramics either by a falling weight or by indenting the Vickers pyramid. Energy distributions in emitted acoustical emission pulses were found to be random (Poisson-like) in the events of short (0.3-0.5 ms) impact forcing. In the case of the gradual (∼1 s) indenting, the energy distributions followed a power law typical for the self-similar structures appearing through long-range interactions between nucleating microcracks (scaling). In ductile materials, the rate of straining governs the dislocation motion. Provided enough loading time, such as in indenting experiments, the sliding dislocations form bunches, which serve as weak points for the crack nucleation. Given a tend to self-organizing in the ensemble of dislocations, the energy release in impeded cracking process (i. e. indenting) exhibits statistically ordered behavior.

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A comprehensive review on ZnS: From synthesis to an approach on solar cell

Cited by 139 publications

References 86 publications

First principles calculations and experimental study of the optical properties of Ni-doped ZnS

First principles calculations and experimental study of the optical properties of Ni-doped ZnS

Optical Study of High Quality c -ZnS Crystals for UV Photodiodes and Photoelectrochemical Applications

Impact and indenting damage of CVD-produced ZnS and ZnSe ceramics

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