2022
DOI: 10.1016/j.jallcom.2022.163918
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A comprehensive review on the effects of doping process on the thermoelectric properties of Bi2Te3 based alloys

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Cited by 53 publications
(19 citation statements)
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“…In the high-temperature range (above 600 K), GeTe-based thermoelectric materials exhibit optimized band structure, efficient electronic transport, and low lattice thermal conductivity, thereby positively influencing the ZT value. However, in the low-temperature range approaching room temperature, the thermoelectric performance of GeTe is poor due to the high intrinsic carrier concentration . Nevertheless, the thermoelectric performance of GeTe materials can be optimized through methods such as alloying and doping.…”
Section: Resultsmentioning
confidence: 99%
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“…In the high-temperature range (above 600 K), GeTe-based thermoelectric materials exhibit optimized band structure, efficient electronic transport, and low lattice thermal conductivity, thereby positively influencing the ZT value. However, in the low-temperature range approaching room temperature, the thermoelectric performance of GeTe is poor due to the high intrinsic carrier concentration . Nevertheless, the thermoelectric performance of GeTe materials can be optimized through methods such as alloying and doping.…”
Section: Resultsmentioning
confidence: 99%
“…However, in the low-temperature range approaching room temperature, the thermoelectric performance of GeTe is poor due to the high intrinsic carrier concentration. 41 Nevertheless, the thermoelectric performance of GeTe materials can be optimized through methods such as alloying and doping. For example, doping with Sn can modify the band structure to enhance the power factor, while doping with Sb can adjust the carrier concentration to optimize the electrical conductivity and Seebeck coefficient.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Bi 2 Te 3 -based alloys were first investigated as promising thermoelectric materials in the 1960s, and so far they are still the most popular near-room-temperature thermoelectric materials. In the past few decades, great improvement in thermoelectric performance has been achieved in p-type Bi 2 Te 3 . A maximum ZT of ∼2.4 for a p-type Bi 2 Te 3 superlattice thin film has been reached by controlling the transport of phonons and electrons .…”
Section: State-of-the-art Te Materials In Contact Designmentioning
confidence: 99%
“…1,2 The efficiency of thermoelectric materials is directly related to the so-called figure of merit zT, defined as zT = α 2 T/ρκ, where α is the thermopower, T is the absolute temperature, ρ is the electrical resistivity, and κ is the thermal conductivity which includes the contributions of both carriers (electronic thermal conductivity κ e ) and phonons (lattice thermal conductivity κ l ), κ = κ e + κ l . 3 Achieving high values of zT requires increasing α and at the same time decreasing κ, a challenging task, since these variables are strongly coupled and depend on the carrier concentration n. 4 Bi 2 Te 3 -based compounds are pioneer thermoelectric materials for room-temperature applications, 5 and many attempts have been made to improve their efficiency over a wide temperature range. Several key strategies that stand out include optimization of the charge carrier concentration; 6,7 widening the band gap 8−10 to suppress the bipolar effect; enhancing the thermopower and thermal conductivity by alloying Bi 2 Te 3 with Sb 11−14 and Se; 15,16 nanostructuring to reduce the thermal conductivity; 17,18 and utilizing the convergence of electronic bands in alloys to further increase the zT.…”
Section: ■ Introductionmentioning
confidence: 99%