Abstract:This paper presents loss analysis of SiC MOSFET based bidirectional DAB (Dual Active Bridge) DC-DC converter for EV application. This converter benefits the efficiency of the EV vehicle by reducing power loss and voltage drop across the converter. The DAB uses WBG (Wide-Bandgap) semiconductor devices such as SiC MOSFET to optimize the efficiency and extend soft-switching over whole operating range. The SiC MOSFET switching devices rated at 1200 V with different drain- source on-state resistance Rds(on) of 21 m… Show more
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