A Comprehensive Analysis of Junctionless Tri-Gate (TG) FinFET Towards Low-Power and High-Frequency Applications at 5-nm Gate Length

Sreenivasulu, V. Bharath; Narendar, Vadthiya

doi:10.1007/s12633-021-00987-8

Cited by 43 publications

(17 citation statements)

References 37 publications

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“…The cut-off frequency (f T ) is considered as a crucial RF parameter which defines the speed response of the RF circuit design. The f T can be expressed by [14][15][16][17]…”

Section: Device Validationmentioning

confidence: 99%

“…It should be underlined that the great interest in the FinFET technology is witnessed by the many papers that have been published over the years to investigate the FinFET performance by using both TCAD simulations [8][9][10][11][12][13] and measurements [14][15][16][17][18]. Although a measurement-based investigation is a mandatory step prior to the use of a device in real applications, the TCAD simulation is considered a powerful and costless type of analysis to optimize device performance.…”

Section: Introductionmentioning

confidence: 99%

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Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure

et al. 2021

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The FinFET architecture has attracted growing attention over the last two decades since its invention, owing to the good control of the gate electrode over the conductive channel leading to a high immunity from short-channel effects (SCEs). In order to contribute to the advancement of this rapidly expanding technology, a 3D 14-nm SOI n-FinFET is performed and calibrated to the experimental data from IBM by using Silvaco TCAD tools. The calibrated TCAD model is then investigated to analyze the impact of changing the fin width, fin height, gate dielectric material, and gate length on the DC and RF parameters. The achieved results allow gaining a better understanding and a deeper insight into the effects of varying the physical dimensions and materials on the device performance, thereby enabling the fabrication of a device tailored to the given constraints and requirements. After analyzing the optimal values from different changes, a new device configuration is proposed, which shows a good improvement in electrical characteristics.

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“…The cut-off frequency (f T ) is considered as a crucial RF parameter which defines the speed response of the RF circuit design. The f T can be expressed by [14][15][16][17]…”

Section: Device Validationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure

et al. 2021

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“…9. The process ow is similar to the modern fabrication style [33], [34]. Wafer selection plays an important role for design of wearable antenna, it mainly effects the antenna parameters.…”

Section: G Fabrication Ow Of Silicon Wearable Body Area Antennamentioning

confidence: 99%

Silicon Wearable Body Area Antenna for Speech Enhanced IOT and Medical Applications

Vignesh

Kanithan

Jana

et al. 2021

Preprint

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We propose in this paper a reduction in the size of wearable antennas on silicon (Si) for medicinal frameworks and Internet of things (IoT). This research also introduces one more type of dynamic patch antenna designed in favor of speech-enhanced healthcare applications. The most significant impediment to the adoption of smart correspondence and medical services frameworks is voice-enabled IoT. The primary objective of a body area network (BAN) is to give ceaselessly clinical information to the doctors. Actually wireless body area network is flexible, dense, trivial and less expensive. On the other hand the main disadvantage is low efficiency for small printed antenna. Microstrip silicon antenna recurrence is changed because of ecological conditions, distinctive reception apparatus areas and diverse framework activity modes. By using tunable antenna the efficiency of bandwidth usage can be increased. Amplifiers are associated with the feed line of antenna in order to build its dynamic range. In this study, a dynamic polarized antenna is constructed, analysed and attempted for fabrication. The gain of the antenna is 13 ± 2dB for the frequency range of 390 to 610MHz. The output of the polarized antenna is roughly 19 dBm. At different environmental conditions the performance and ability to control the antenna could vary. To achieve stable performance, we have used varactor diode and voltage controlled diode. This silicon wearable antenna can be fabricated and tested for many medical applications like health monitoring system, pacemakers etc. Furthermore, Micromachining techniques can be used to lower the practical dielectric constant of Silicon and hence improve radiation efficiency.

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“…The exploration to the analog/radio frequency (RF) and noise performance of any device is an integral part of its reliability and applicability evaluation. Over the years, various works related to the FinFET devices in this field have been reported 14–25 . In our previous articles, we have reported the noise characteristics of a VSTB FET 11,12 .…”

Section: Introductionmentioning

confidence: 99%

Study of enhanced DC and analog/radio frequency performance of a vertical super‐thin body FET by high‐k gate dielectrics

Barman

Baishya

2021

Int J RF Microw Comput Aided Eng

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This article reports the DC and analog/radio frequency (RF) response of a newly invented device called vertical super‐thin body (VSTB) FET towards high‐k (Si3N4/HfO2) and low‐k (SiO2) gate dielectrics in conjunction with the scaling effect through a well‐calibrated Sentaurus TCAD tool. At channel length (LG) of 20 nm, compared to SiO2, Si3N4 improves various DC parameters such as off‐state leakage current (Ioff), on‐current (Ion), on‐to‐off current ratio (Ion/Ioff ratio), subthreshold swing (SS), and drain‐induced‐barrier‐lowering (DIBL) by 77.15%, 26.2%, one order of magnitude, 15.78%, and 36.2%, respectively. On the other hand, a higher improvement is seen in all these DC parameters for the HfO2 gate dielectric (Ioff, Ion, Ion/Ioff ratio, SS, DIBL improves respectively by 91.8%, 41.57%, two orders of magnitude, 28.28%, and 62.71%). The underlying physics behind such excellent improvement is explained by the device off‐state energy band diagram, electrostatic potential, and channel electron density profile for each dielectric. Further, for all the gate dielectrics considered, the device characteristics were studied for a wide range of LG from 10 to 50 nm to reveal the scaling impact on the device performance. Irrespective of the gate dielectric material, the device exhibits excellent performance at LG = 10 nm, which in turn indicates to the brilliant scalability of this new device. Besides, although Si3N4 and HfO2 increase gate capacitance (Cgg)/gate‐drain capacitance (Cgd), due to the extremely low values of Cgg/Cgd, enhanced unit gain cut‐off frequency, and gain‐bandwidth‐product is achieved. In addition, the increased transconductance (gm) of the device applying Si3N4/HfO2 gate dielectric leads to a higher peak value of TGF, intrinsic gain, TFP, GFP, and GTFP. This study intends to expand the fundamental knowledge about such a new device as a VSTB FET and hence, aims to be utilized in the future research of this novel device.

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A Comprehensive Analysis of Junctionless Tri-Gate (TG) FinFET Towards Low-Power and High-Frequency Applications at 5-nm Gate Length

Cited by 43 publications

References 37 publications

Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure

Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure

Silicon Wearable Body Area Antenna for Speech Enhanced IOT and Medical Applications

Study of enhanced DC and analog/radio frequency performance of a vertical super‐thin body FET by high‐k gate dielectrics

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