Bismuth silicate thin films were deposited using atomic layer deposition (ALD) with a novel precursor, Bi(CH 2 SiMe 3 ) 3 , serving as both bismuth and silicon source. Precursor synthesis, analysis, and crystal structure are also reported. Bi(CH 2 SiMe 3 ) 3 forms hexagonal crystals with a = 10.7110(11) , b = 10.7110(11) , c = 10.2500(7) ; space group P6 3 . The deposition temperature of thin films was 200±450 C, where a constant growth rate of 0.4 per cycle was obtained between 250 C and 350 C. Impurity levels of bismuth silicate films deposited at 250 C were below 0.2 at.-% and 0.1 at.-% for carbon and hydrogen, respectively. The as-deposited films were amorphous, and post-synthetic annealing in an atmosphere of N 2 or O 2 at 400±1000 C was applied.