2017
DOI: 10.1063/1.4976505
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A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs ambipolar bilayers

Abstract: We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration, we observe signs of magnetic-field-induced exciton condensation in the quantum Hall bilayer regime. In the same devices, we can study the zero-magnetic-field e-h and h-h bilayer states using Coulomb drag. Very strong e-h Coulomb drag resistivity (up to 10% of the single layer resis… Show more

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Cited by 9 publications
(1 citation statement)
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“…The lifetime of these excitons can be increase in an electron-hole bilayer system (EHBL), which consists of two parallel layers, separated by a distance d, where electrons are confined to one layer and holes are in the other. The EHBL system can be realized in double quantum well (DQW) structures such as the GaAs/AlGaAs heterostructure [1][2][3][4][5][6][7] and bilayer graphene [8][9][10][11]. By applying an external electric field, one can minimize the overlapping of the wave functions of the electron and hole, which reduces the electron-hole recombination rate and hence increases the average lifetime of excitons as compared to direct excitons in the excited semiconductor.…”
Section: Introductionmentioning
confidence: 99%
“…The lifetime of these excitons can be increase in an electron-hole bilayer system (EHBL), which consists of two parallel layers, separated by a distance d, where electrons are confined to one layer and holes are in the other. The EHBL system can be realized in double quantum well (DQW) structures such as the GaAs/AlGaAs heterostructure [1][2][3][4][5][6][7] and bilayer graphene [8][9][10][11]. By applying an external electric field, one can minimize the overlapping of the wave functions of the electron and hole, which reduces the electron-hole recombination rate and hence increases the average lifetime of excitons as compared to direct excitons in the excited semiconductor.…”
Section: Introductionmentioning
confidence: 99%