Abstract:In this paper, we present a new, analytical and complete degraded drain current model for submicrometer PMOS-FET's. The model is valid in all operation regions. It can accurately describe the effect of the hot-carrier induced-trapped oxide charges on the device performance. The model is based on the channel shortening concept, it includes the effects of source/drain series resistances, the effective resistance of the hot-carrier damaged region, and the threshold voltage shift due to the oxide trapped charges. … Show more
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