A comparison study of hydrogen incorporation among nanocrystalline, microcrystalline and polycrystalline diamond films grown by chemical vapor deposition

Tang, C. J.; Neto, M.A.; Soares, M.J.; Fernandes, A.J.S.; Neves, A.J.; Grácio, J.

doi:10.1016/j.tsf.2006.10.132

Cited by 40 publications

(19 citation statements)

References 33 publications

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“…${{A_{{\rm CH}} } \mathord{\left/ {\vphantom {{A_{{\rm CH}} } t}} \right. \kern-\nulldelimiterspace} t}$ , where A CH is the integrated intensity of the CH stretching band and t the film thickness, can serve as an indicator for qualitative comparison of the content of bonded hydrogen among different CVD diamond films 27. We calculated the values of ${{A_{{\rm CH}} } \mathord{\left/ {\vphantom {{A_{{\rm CH}} } t}} \right.…”

Section: Resultsmentioning

confidence: 99%

“…The incorporation of hydrogen into polycrystalline CVD diamond films has been widely investigated 22–24. Compared to large‐grained polycrystalline diamond films, a much larger amount of hydrogen impurity has been found in fine‐grained nanodiamond 4, 14, 25–27. However, so far there has no study on the influence of oxygen addition in the gas phase on hydrogen impurity incorporation into NCD films.…”

Section: Introductionmentioning

confidence: 99%

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Role of oxygen additive on hydrogen impurity incorporation in nanocrystalline diamond films fabricated by microwave plasma chemical vapor deposition

Tang¹,

Gu²,

Grácio³

et al. 2009

Physica Status Solidi (a)

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In this work, we study the influence of oxygen additive in the gas phase on hydrogen impurity incorporation into thick nanocrystalline diamond (NCD) films. Various diamond samples were grown on large silicon wafers of 5.08 cm diameter by adjusting the amount of oxygen and nitrogen additives into a conventional CH4/H2 plasma while keeping the other parameters constant using a 5‐kW microwave plasma‐assisted chemical vapor deposition (MPCVD) reactor. The morphology, crystalline quality, and hydrogen impurity content of the produced diamond samples were characterized using scanning electron microscopy, micro‐Raman spectroscopy, and Fourier transform infrared (FTIR) spectroscopy, respectively. The Raman and the FTIR spectra of the diamond samples indicate that on increasing the amount of oxygen additive in the gas phase, the crystalline quality of the NCD films is significantly enhanced, while their bonded hydrogen content decreases drastically. We conclude that a small amount of oxygen addition has an enhancement effect on the overall quality of diamond films ranging from polycrystalline to nanocrystalline in two ways: improving the diamond crystalline quality and suppressing hydrogen impurity incorporation.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Role of oxygen additive on hydrogen impurity incorporation in nanocrystalline diamond films fabricated by microwave plasma chemical vapor deposition

Tang¹,

Gu²,

Grácio³

et al. 2009

Physica Status Solidi (a)

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“…Hydrogen's high mobility and bonding may release accumulated stress in carbon layers, [27][28][29] as well as in other materials. 30 It was shown previously, 26,[31][32][33][34][35][36][37][38][39][40] that polycrystalline CVD diamond film deposited in a hydrogen containing atmosphere ͑even from an H deficient/Ar rich gas phase with ϳ1% H 2 ͒ contains up to a few at. % of hydrogen atoms.…”

Section: Introductionmentioning

confidence: 99%

“…% of hydrogen atoms. The concentration of hydrogen correlates inversely 34,[36][37][38][39][40] with the diamond grain size, reaching ϳ20 at. % for 5 nm diamond crystallites.…”

Section: Introductionmentioning

confidence: 99%

Bulk and surface thermal stability of ultra nanocrystalline diamond films with 10–30 nm grain size prepared by chemical vapor deposition

Michaelson

Stacey

Orwa

et al. 2010

Journal of Applied Physics

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The thermal stability of nanocrystalline diamond films with 10–30 nm grain size deposited by microwave enhanced chemical vapor deposition on silicon substrate was investigated as a function of annealing temperature up to 1200 °C. The thermal stability of the surface-upper atomic layers was studied with near edge x-ray absorption fine structure (NEXAFS) spectroscopy recorded in the partial electron yield mode. This technique indicated substantial thermally induced graphitization of the film within a close proximity to the surface. While in the bulk region of the film no graphitization was observed with either Raman spectroscopy or NEXAFS spectroscopy recorded in total electron yield mode, even after annealing to 1200 °C. Raman spectroscopy did detect the complete disappearance of transpolyacetylene (t-PA)-like ν1 and ν3 modes following annealing at 1000 °C. Secondary ion mass spectroscopy, applied to investigate this relative decrease in hydrogen atom concentration detected only a ∼30% decrease in the bulk content of hydrogen atoms. This enhanced stability of sp3 hybridized atoms within the bulk region with respect to graphitization is discussed in terms of carbon bond rearrangement due to the thermal decomposition of t-PA-like fragments.

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“…It is known, from the literature, that hydrogen incorporation into CVD diamond films depends strongly on the deposition conditions, among which the substrate temperature is a key parameter. 30 Giving that the CVD diamond thin films discussed in this paper were deposited at the same substrate temperature ͑ϳ800°C͒, the above assumption is reasonable and valid.…”

Section: -4mentioning

confidence: 83%

Dielectric properties of hydrogen-incorporated chemical vapor deposited diamond thin films

Liu

Xiao

Wang

et al. 2007

Journal of Applied Physics

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Diamond thin films with a broad range of microstructures from a ultrananocrystalline diamond (UNCD) form developed at Argonne National Laboratory to a microcrystalline diamond (MCD) form have been grown with different hydrogen percentages in the Ar/CH 4 gas mixture used in the microwave plasma enhanced chemical vapor deposition (CVD) process. The dielectric properties of the CVD diamond thin films have been studied using impedance and dc measurements on metal-diamond-metal test structures. Close correlations have been observed between the hydrogen content in the bulk of the diamond films, measured by elastic recoil detection (ERD), and their electrical conductivity and capacitance-frequency (C-f) behaviors. Addition of hydrogen gas in the Ar/CH 4 gas mixture used to grow the diamond films appears to have two main effects depending on the film microstructure, namely, (a) in the UNCD films, hydrogen incorporates into the atomically abrupt grain boundaries satisfying sp 2 carbon dangling bonds, resulting in increased resistivity, and (b) in MCD, atomic hydrogen produced in the plasma etches preferentially the graphitic phase codepositing with the diamond phase, resulting in the statistical survival and growth of large diamond grains and dominance of the diamond phase, and thus having significant impact on the dielectric properties of these films. Diamond thin films with a broad range of microstructures from a ultrananocrystalline diamond ͑UNCD͒ form developed at Argonne National Laboratory to a microcrystalline diamond ͑MCD͒ form have been grown with different hydrogen percentages in the Ar/ CH 4 gas mixture used in the microwave plasma enhanced chemical vapor deposition ͑CVD͒ process. The dielectric properties of the CVD diamond thin films have been studied using impedance and dc measurements on metal-diamond-metal test structures. Close correlations have been observed between the hydrogen content in the bulk of the diamond films, measured by elastic recoil detection ͑ERD͒, and their electrical conductivity and capacitance-frequency ͑C-f͒ behaviors. Addition of hydrogen gas in the Ar/ CH 4 gas mixture used to grow the diamond films appears to have two main effects depending on the film microstructure, namely, ͑a͒ in the UNCD films, hydrogen incorporates into the atomically abrupt grain boundaries satisfying sp 2 carbon dangling bonds, resulting in increased resistivity, and ͑b͒ in MCD, atomic hydrogen produced in the plasma etches preferentially the graphitic phase codepositing with the diamond phase, resulting in the statistical survival and growth of large diamond grains and dominance of the diamond phase, and thus having significant impact on the dielectric properties of these films.

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A comparison study of hydrogen incorporation among nanocrystalline, microcrystalline and polycrystalline diamond films grown by chemical vapor deposition

Cited by 40 publications

References 33 publications

Role of oxygen additive on hydrogen impurity incorporation in nanocrystalline diamond films fabricated by microwave plasma chemical vapor deposition

Role of oxygen additive on hydrogen impurity incorporation in nanocrystalline diamond films fabricated by microwave plasma chemical vapor deposition

Bulk and surface thermal stability of ultra nanocrystalline diamond films with 10–30 nm grain size prepared by chemical vapor deposition

Dielectric properties of hydrogen-incorporated chemical vapor deposited diamond thin films

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