A Comparison of the Hole Mobility and Early Growth of Epitaxial Silicon on Flame Fusion, Flux, and Czochralski Spinel

Cullen, G. W.; Wang, C. C.

doi:10.1149/1.2408129

Cited by 17 publications

(7 citation statements)

References 20 publications

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“…The mismatch between the crystal lattice of the rhombohedral sapphire and the cubic silicon appears not to have been as limiting a factor (12) as was originally anticipated (2). The chemical reactivity of the spinel has proven to be a strong function of the chemical composition, which in turn is influenced by the method of growth (11). Very different semiconducting properties have been observed in silicon deposited on spinels with such subtle differences in the chemical composition that the lattice constants are very nearly the same (11).…”

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confidence: 88%

“…Spinel has been considered as a possible alternate substrate because of the relatively good crystallographic match to, and relatively low chemical reactivity with, silicon (7-10). Higher mobilities have been achieved for some, but not all carrier types, orientations, and thicknesses of silicon on spinel (11,12). As the demand for larger substrate diameters (2 in.…”

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confidence: 99%

“…In the case of sapphire, the flame fusion and Czochralski material are chemically identical; therefore, the same conditions can be used for the deposition of silicon on both types of substrates. In the case of spinel, however, the properties of concern for use as a substrate material are a strong function of the method used for the growth of the crystal, and therefore the substrate surface preparation and/or the conditions employed for silicon deposition must be adjusted accordingly (11,12).…”

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confidence: 99%

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A Comparison of the Semiconducting Properties of Thin Films of Silicon on Sapphire and Spinel

Cullen

Corboy

1974

J. Electrochem. Soc.

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The Hall mobilities in 0.5 and 1.0 ~m thick heteroepitaxial silicon on (I[02) sapphire and (100) and (111) spinel substrates are compared. The substrates employed were Czochralski sapphire, alumina rich flame fusion spinel, stoichiometric Czochralski spinel, and a "modified" alumina-rich Czochralski spinel. The semiconducting properties of the silicon on the spinels are similar if the Czochralski grown substrate surfaces are air annealed prior to deposition. The reproducibility achieved in electrical properties in silicon on spinel is related to the method of preparation of the substrate. In comparing the semiconducting properties in silicon on sapphire with silicon on spinel, one finds that the MOS transistor mobilities are more similar than the Hall l-nobilities.

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A Comparison of the Semiconducting Properties of Thin Films of Silicon on Sapphire and Spinel

Cullen

Corboy

1974

J. Electrochem. Soc.

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“…It has been demonstrated that the addition of HC1 or TCE (trichloroethylene) during the oxidation results in improved characteristics of MOS devices (1-3). In addition, it has been observed that such additions to the dry oxygen atmosphere increase the rate of oxidation (1-7), and suppress the formation of oxidation-induced stacking faults in silicon (8)(9)(10)(11)(12)(13).…”

Section: Thermal Oxidation Of Silicon In Wet Ojtce Mixtures At 1200~ ...mentioning

confidence: 99%

“…But, in fact, the true structures at the Si-substrate interfaces are not really known. Therefore, it is considered important to determine experimentally if spinel is to be preferred over sapphire under growth conditions that appear to be best for Czochralski (Cz) spinel, and not necessarily for nonstoichiometric spinel (11).…”

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Heteroepitaxial Silicon Growth Using SiH4 in Helium‐Hydrogen Atmospheres

Manasevit

1979

J. Electrochem. Soc.

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The use of H2-He growth atmospheres has been studied for the growth of Si on spinel and sapphire. It was found that film growth rates are carriergas composition dependent and, in general, show an increase with increased H2 concentrations. At low concentrations of H2 in He, only slight changes in growth rate occur, if any, and growth rates become very temperature dependent, decreasing with increasing temperature. At a growth temperature of I025~ film doping levels do not change appreciably with growth rate for a constant dopant gas (ASH3) flow rate and high growth rates (up to about 10 #m/min). Film properties are also affected by the Sill4 source, growth temperature, the condition of the spinel surface, and the orientation of the substrate. Mobilities up to 925 cm2/V-sec have been measured in 2 ~m thick (lll)Si films grown on spinel. The growth of (100)Si on (l10)MgA1204 has been observed. The quality of Si films grown in H2-He and pure H2 atmospheres on (01]'2)A1~O8 and ,~(1120)A1208 does not seem to be influenced by the growth atmosphere, but growth on (101-4)A1~O~ has produced higher quality films in a Ha-in-He carrier gas than in pure Ha. * Electrochemical Society Active Member.

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Tables 1 - 5, Figs. 1 - 12

Bonnenberg¹,

Hempel²

Landolt-Börnstein - Group III Condensed Matter

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A Comparison of the Hole Mobility and Early Growth of Epitaxial Silicon on Flame Fusion, Flux, and Czochralski Spinel

Abstract: not Available.

Cited by 17 publications

References 20 publications

A Comparison of the Semiconducting Properties of Thin Films of Silicon on Sapphire and Spinel

A Comparison of the Semiconducting Properties of Thin Films of Silicon on Sapphire and Spinel

Heteroepitaxial Silicon Growth Using SiH4 in Helium‐Hydrogen Atmospheres

Tables 1 - 5, Figs. 1 - 12

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