A comparison of silicon and gallium arsenide large signal IMPATT diode behaviour between 10 and 100 GHz

Grierson, J.R.; Ohara, Shunji

doi:10.1016/0038-1101(73)90115-9

Cited by 13 publications

(2 citation statements)

References 19 publications

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“…Table 1 shows the structural parameters of the diode about each layer's doping concentration and thickness in the simulation, the work function of Ni is 5.15 eV. As shown in figure 1, in order to study the non-linear large signal characteristics of the IMPATT diode and to make the analysis a robust one, particularly for the avalanche impact mechanism, a sinusoidal voltage applies through a blocking capacitor and drives the diode in the spice circuit [23,24]. Fourier analysis is performed on the final output wave of the IMPATT diode at the given fundamental frequency.…”

Section: Device Structure and Simulation Methodsmentioning

confidence: 99%

Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects

Zhang¹,

Yang²,

Yang³

et al. 2020

Semicond. Sci. Technol.

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In this paper, the effects of n-type GaN deep level defects on the DC, small signal AC, and radio frequency (RF) characteristics of Ni/GaN Schottky barrier impact ionization avalanche transit time (IMPATT) diode are investigated. A double avalanche termination region (DATR) structural IMPATT diode is proposed to mitigate the influences caused by these deep level defects. Simulation results show that the internal electric field, carrier generation rate and carrier velocity of IMPATT diode are affected by these deep level defects. With the increase of deep level defects density, the maximum RF output power, DC-to-RF conversion efficiency and optimum frequency of the diode all show a tendency to degenerate correspondingly. Through adjusting the electric field property properly of the diode, the DATR structural IMPATT diode improves the performances of IMPATT diode. The negative peak conductance of the improved diode is 11.4 × 103 S cm−2 at 248 GHz, showing the lowest quality factor of 1.42, the improved maximum RF output power of 1.35 MW cm−2 and DC-to-RF conversion efficiency of 15.7% at 220 GHz under the same deep level defects density, these characteristics of the improved DATR structural IMPATT diode reach the level which the low deep level defects density original diode shows.

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Section: Device Structure and Simulation Methodsmentioning

confidence: 99%

Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects

Zhang¹,

Yang²,

Yang³

et al. 2020

Semicond. Sci. Technol.

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show abstract

“…Several methods for the large-signal analysis of IMPATTs and other negative resistance devices are reported in References [4][5][6][7][8]. Earlier reported large-signal modelling is basically analytical modelling of read-diodes with some simplifications and restrictive assumptions, such as, equal carrier velocities, ionization rates of electrons and holes, punched through depletion layer boundaries, non-inclusion of mobile space charge effects OE9 .…”

Section: Introductionmentioning

confidence: 99%

Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis

Mukherjee¹,

Tripathy

Pati

2015

J. Semicond.

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A full-scale, self-consistent, non-linear, large-signal model of double-drift hetero-structure IMPATT diode with general doping profile is derived. This newly developed model, for the first time, has been used to analyze the large-signal characteristics of hexagonal SiC-based double-drift IMPATT diode. Considering the fabrication feasibility, the authors have studied the large-signal characteristics of Si/SiC-based hetero-structure devices. Under small-voltage modulation (∼ 2%, i.e. small-signal conditions) results are in good agreement with calculations done using a linearised small-signal model. The large-signal values of the diode's negative conductance (5 × 106 S/m2), susceptance (10.4 × 107 S/m2), average breakdown voltage (207.6 V), and power generating efficiency (15%, RF power: 25.0 W at 94 GHz) are obtained as a function of oscillation amplitude (50% of DC breakdown voltage) for a fixed average current density. The large-signal calculations exhibit power and efficiency saturation for large-signal (> 50%) voltage modulation and thereafter decrease gradually with further increasing voltage-modulation. This generalized large-signal formulation is applicable for all types of IMPATT structures with distributed and narrow avalanche zones. The simulator is made more realistic by incorporating the space-charge effects, realistic field and temperature dependent material parameters in Si and SiC. The electric field snap-shots and the large-signal impedance and admittance of the diode with current excitation are expressed in closed loop form. This study will act as a guide for researchers to fabricate a high-power Si/SiC-based IMPATT for possible application in high-power MM-wave communication systems.

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A study of the power handling ability of gallium arsenide and silicon, single and double drift IMPATT diodes

Ohara¹,

Grierson²

1974

Solid-State Electronics

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A comparison of silicon and gallium arsenide large signal IMPATT diode behaviour between 10 and 100 GHz

Cited by 13 publications

References 19 publications

Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects

Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects

Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis

A study of the power handling ability of gallium arsenide and silicon, single and double drift IMPATT diodes

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