2019
DOI: 10.1016/j.pecs.2019.01.001
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A comparison of methodologies for the non-invasive characterisation of commercial Li-ion cells

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Cited by 216 publications
(209 citation statements)
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“…If more rates are tested, the Peukert curve (capacity vs. rate) could be used as long as the rates are within the section with diffusion limitation (Figure 3a The second set of information to be gathered from the RPT is the OCV vs. SOC relationship at the current SOH. A discussion on OCV is out of the scope of this paper and can be found in [9,40]. The OCV vs. SOC relationship can vary a lot with aging and, since gathering a proper OCV vs. SOC curve can take weeks of testing [9], it is not feasible to repeat the process on every cell at each RPT.…”
Section: Reference Performance Testmentioning
confidence: 99%
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“…If more rates are tested, the Peukert curve (capacity vs. rate) could be used as long as the rates are within the section with diffusion limitation (Figure 3a The second set of information to be gathered from the RPT is the OCV vs. SOC relationship at the current SOH. A discussion on OCV is out of the scope of this paper and can be found in [9,40]. The OCV vs. SOC relationship can vary a lot with aging and, since gathering a proper OCV vs. SOC curve can take weeks of testing [9], it is not feasible to repeat the process on every cell at each RPT.…”
Section: Reference Performance Testmentioning
confidence: 99%
“…It has to be stated that, as discussed in [9], a low-rate charge or discharge cannot be considered as OCV or pseudo-OCV curves as they are not independent of the regime. The pseudo-OCV curve can be calculated by averaging the low-rate charge and discharge curves [9,41,42]. This method is usually accurate, but it is highly recommended to check the validity of the results.…”
Section: Reference Performance Testmentioning
confidence: 99%
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“…The working principle of the EIS brings challenges in the identification of the slow time-constant diffusion processes within liquid and solid [70], while a Warburg element may represent one out of three possible diffusion processes [50]. Other empirical approaches have proposed to model accurately and temperature depending the diffusion resistance with adding a proportional to the square root of time resistive element, dependent as well on the open circuit voltage V OC , instead of CPEs [71].…”
Section: Diffusion Resistancementioning
confidence: 99%