A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures

“…This could be a strategy to reduce the production cost, but as a trade-off, P-type implantation at room temperature may have a higher probability of introducing new BPDs post-activation annealing than heated implantation. Qian et al have previously shown that SiC power MOSFETs with P-type implantation at 500 • C, compared to those with P-type implantation at room temperature, exhibit almost negligible body diode degradation [14]. The difference in body diode degradation at these two temperatures aligns with the observed difference in this work between devices from Vendor C and those from Vendors E and I, leading to the belief that this variation is possibly due to different implantation temperatures and/or different annealing conditions.…”

“…As the thermal growth technology of the gate oxide layer and the epitaxial layer has gradually matured, the reliability of planar SiC power MOSFETs has significantly improved [7][8][9][10][11][12]. The degradation of the body diode has become negligible for voltage ratings below 1.2 kV, and some vendors have even eliminated the impact of body diode degradation at the voltage rating of 3.3 kV [13,14]. This allows the parasitic body diode to be directly used as a free-wheeling diode, replacing the external Schottky diode and thus significantly reducing the production cost [15].…”