A Comparison of Electron, Proton and Gamma Irradiation Effects on the I-V Characteristics of 200 GHz SiGe HBTs

Hegde, Vinayakprasanna N.; Pradeep, Thalappil; Pushpa, N.; Praveen, K. C.; Bhushan, K. G.; Cressler, John D.; Prakash, A. P. Gnana

doi:10.1109/tdmr.2018.2875064

Cited by 16 publications

(1 citation statement)

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“…Thus, the degradation mechanisms of SiGe HBTs have been studied in various radiation conditions. Total ionizing dose (TID) effects induced by electrons, protons and gamma on Si/SiGe bipolar transistors were investigated in [9]. The studied results indicate that the interface traps in the baseemitter junction and trapped positive charge in the space oxide induced by TID increased the base recombination current and degraded the DC current gain degradation.…”

Section: Introductionmentioning

confidence: 99%

Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions

Li¹,

Liu

et al. 2021

IEEE Access

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The degradation characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) under different bias modes (forward, cutoff and saturation) during irradiation were reported after multiple pulsed neutron-gamma irradiation at room temperature. The radiation-sensitive parameters of the test samples, including base current IB, collector current IC and DC current gain β, were measured and compared before and after every reactor n-γ pulse irradiation. The test results show that IB increased with increasing fluence, and IC slightly increased in the low base-emitter voltage VBE region (approximately from 0.4 V to 0.5 V) and decreased in the high-VBE region (approximately VBE>0.5 V). Moreover, the degradation degree of the test samples was different under different bias conditions. The performance of the test samples under cutoff bias mode displayed the most serious degradation, while those under forward bias mode suffered minimum damage. Meanwhile, the time-dependent annealing characteristics of the DC current gain for SiGe HBTs at various bias conditions were compared and analyzed.

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Section: Introductionmentioning

confidence: 99%