A Comparison Between Ionic Liquid and SiO₂ Gated Zinc Tin Oxide Thin Film Transistor

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnOxdopant layer

“…The μ and SS of the solution-processed Z/S/Z TFT proposed in this work are 14.33 cm 2 V −1 s −1 and 0.13 V dec −1 , respectively, which are also better than the values of 1.47–6.1 cm 2 V −1 s −1 and 0.15–1.39 of the sputtered ZTO TFTs reported in the literature. 21,22,34–36 The above comparison indicates that this study has a significant advancement in ZTO-based TFT technology. The performance of the proposed Z/S/Z TFT is higher than most ZTO-based TFTs fabricated using solution and vacuum sputtering processes.…”

“…This may overcome the bottleneck of m for ZTO-based TFT devices. [20][21][22]29,30,[34][35][36][37][38][39][40]80,81…”

“…The above literature indicates that an additional doping process is usually needed for improving the performance of a ZTO TFT and the mobilities of the solution-processed ZTObased TFTs are 0.2-3.83 cm 2 V À1 s À1 , [29][30][31] which are normally lower than 1.47-6.1 cm 2 V À1 s À1 of vacuum-processed ZTObased TFTs. 21,22,[34][35][36] It seems that there is still room for improvement in the performance of solution-processed ZTO TFTs.…”