A Comparison Between 20:1 and 5:1 Doping Ratios for High Efficiency X-Band GaAs IMPATT Diodes

Huish, P.W.

doi:10.1109/euma.1977.332472

Cited by 3 publications

(2 citation statements)

References 2 publications

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“…Conventional GaN-based SDR IMPATT diodes are mainly composed of the avalanche p-n junction and carrier drift region, but the double-drift region (DDR) diode consists of a p-n junction and two drift regions, and both holes and electrons can be drifted to generate a better RF performance [ 8 , 9 , 10 , 11 ]. In terms of conventional SDR IMPATT diode, the higher the hole concentration of p-type GaN, the better the RF performance of the diode [ 12 , 13 ]. Therefore, before the performance of the IMPATT diode is saturated, as the p-type doping concentration increases, the performance of the device is enhanced accordingly.…”

Section: Introductionmentioning

confidence: 99%

Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode

Dai

Dang

et al. 2021

Micromachines

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Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (DDR) IMPATT diode is investigated in this paper for the first time. The direct-current (DC) steady-state, small-signal and large-signal characteristics are numerically simulated. The results show that compared with the conventional GaN single-drift region (SDR) IMPATT diode, the performance of the p-SiC/n-GaN DDR IMPATT proposed in this design, such as breakdown voltage, negative conductance, voltage modulation factor, radio frequency (RF) power and DC-RF conversion efficiency have been significantly improved. At the same time, the structure proposed in this design has a larger frequency bandwidth. Due to its greater potential in the RF power density, which is 1.97 MW/cm2 in this study, indicates that the p-SiC/n-GaN heterojunction provides new possibilities for the design and manufacture of IMPATT diode.

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Section: Introductionmentioning

confidence: 99%

Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode

Dai

Dang

et al. 2021

Micromachines

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“…Conventional IMPATT diodes have a high-low doped p-n junction (high-low structure) where the avalanche process occurs mainly in the n-type region. Before the rf power of IMPATT reaches saturation, it increases with the p-region concentration [5,6]. However, the practical fabrication of p-n junction GaN structures is challenging in IMPATT devices due to the difficulty of obtaining high concentrations of p-GaN because of the very low effective hole ionization rate [7].…”

Section: Introductionmentioning

confidence: 99%

Study on Electric Field Modulation and Avalanche Enhancement of SiC/GaN IMPATT Diode

Dai

Dang

et al. 2021

Electronics

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This paper proposes a 6H-materials silicon carbide (SiC)/gallium nitride (GaN) heterogeneous p-n structure to replace the GaN homogenous p-n junction to manufacture an impact-ionization-avalanche-transit-time (IMPATT) diode, and the performance of this 6H-SiC/GaN heterojunction single-drift-region (SDR) IMPATT diode is simulated at frequencies above 100 GHz. The performance parameters of the studied device were simulated and compared with the conventional GaN p-n IMPATT diode. The results show that the p-SiC/n-GaN IMPATT performance is significantly improved, and this is reflected in the enhanced characteristics in terms of operating frequency, rf power, and dc-rf conversion efficiency by the two mechanisms. One such characteristic that the new structure has an excessive avalanche injection of electrons in the p-type SiC region owing to the ionization characteristics of the SiC material, while another is a lower electric field distribution in the drift region, which can induce a higher electron velocity and larger current in the structure. The work provides a reference to obtain a deeper understanding of the mechanism and design of IMPATT devices based on wide-bandgap semiconductor materials.

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