A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures

Buyukbas-Ulusan, A.; Taşçıoğlu, İlke; Tataroğlu, A.; Yakuphanoğlu, F.; Altındal, Ş.

doi:10.1007/s10854-019-01570-z

Cited by 30 publications

(6 citation statements)

References 40 publications

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“…The presence of the interfacial layer at the metal-semiconductor interface has induced arising the current of the MPS diode with voltage exponentially in the intermediate voltage region, which is owing to the surface states/traps. Nevertheless, this is not observed for the MS diodes [3,7,27].…”

Section: Electrical Characteristicsmentioning

confidence: 84%

“…by the interfacial layer, R s , and depletion layer [25,26]. The existence of barrier inhomogeneity is the other reason for higher ideality factor states [2][3][4].…”

Section: Electrical Characteristicsmentioning

confidence: 99%

“…In MS structure, the conductivity or current transport mechanism depends on various factors such as surface preparation, barrier formation at M/S interface and its homogeneity, density of surface states (N ss ) at M/S interface which have energies in the bandgap interval of the semiconductor, doping concentration of donor/acceptor atoms (N D /N A ), temperature, frequency, applied voltage, etc. [1][2][3][4][5][6]. When a polymer or insulating layer is placed between metal and semiconductors by various techniques, MS diode converts to MIS or MPS type diodes and leads to changes in both the electrical and dielectric properties.…”

Section: Introductionmentioning

confidence: 99%

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On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

et al. 2020

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The present study aims to investigate the effect of (PVP: Sn-TeO2) interfacial layer on the electrical parameters of the Al/p-Si diode. For this aim, (Sn-TeO2) nanostructures were developed by the ultrasound-assisted method, and both their electrical and optical characteristics were investigated by XRD, SEM, EDS, and UV–Vis methods. The bandgap of Sn-TeO2 was found as 4.65 eV from the (αhυ)2 vs (hυ) plot. The main electrical parameters of the Al/p-Si diodes with/ without (PVP: Sn-TeO2) interlayer, such as ideality factor (n), zero-bias barrier height (Φ0), and series resistance (Rs), were calculated by applying and comparing two methods of thermionic emission theory and Cheung’s functions. These results show that the presence of the (PVP: Sn-TeO2 interlayer, along with the increase of Φ0, and the decrease of n and Rs, led to a significant increment in the rectification of MPS when compared to MS diode. The current-transport mechanisms (CTMs) of them were examined through the forward LnIF − LnVF and reverse LnIR − VR0.5 bias currents, and then, the Poole–Frenkel and Schottky field-lowering coefficients (β) were calculated and obtained its value from the theoretical and experimental methods showed that the mechanism of the reverse current of MS and MPS diodes is governing by the Schottky emission and Pool-Frenkel mechanism, respectively.

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Section: Electrical Characteristicsmentioning

confidence: 84%

“…by the interfacial layer, R s , and depletion layer [25,26]. The existence of barrier inhomogeneity is the other reason for higher ideality factor states [2][3][4].…”

Section: Electrical Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

et al. 2020

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“…It is clear that increase in dopant concentration in LiCr x Mn 1−x PO 4 will cause a successive increase in AC conductivity at high‐frequency region, which is accredited to migration as well as the polarization of ions. The increase in AC conductivity owes to increase in number of charge carriers due to addition of dopant 63,67,68 . Therefore, dielectric dispersion witnessed via frequency variation endorses the electrical charge hopping mechanism, which governs the charge transport as well as relaxation phenomenon in active material.…”

Section: Resultsmentioning

confidence: 99%

Synthesis of Cr doped LiMnPO ₄ cathode materials and investigation of their dielectric properties

Bibi

Khan

et al. 2021

Intl J of Energy Research

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Summary Lithium manganese phosphate (LiMnPO4) and a series of chromium‐doped lithium manganese phosphate with variation in Cr content LiCrxMn1−xPO4 (x = 0.03, 0.06, 0.1) were prepared via conventional sol‐gel method and their dielectric properties have been explored as a function of frequency. The structure and morphology were investigated by X‐ray diffraction technique (XRD), Fourier transformed infrared spectroscopy (FTIR), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) techniques. The influence of frequency upon electrical conductivity as well as di‐electric properties of the as‐synthesized LiCrxMn1−xPO4 materials have been analyzed by dielectric parameters and AC conductivity using impedance analyzer. It was observed that dielectric constant increased with frequency at lower chromium concentration while at higher chromium contents, the dielectric constant was decreased with increasing frequency. Hence, the composition with highest Cr content (ie, x = 0.1) is proved as best material for various applications owing to its lowest AC‐conductivity and lowest dielectric loss. Therefore, it is revealed that chromium doping is quite advantageous for performance of LiMnPO4 in device applications as Cr doped LiMnPO4 unveiled improved dielectric loss.

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“…Analysis of the Impedance Spectrum for the Pd/n-(UNCD/a-C:H:N)/p-Si HJD. Impedance spectroscopy is a powerful tool for analyzing the electrical/dielectric properties and for investigating the relaxation process of the electronic devices [41]. It is employed to measure the response of the material to a small amplitude excitation over a range of frequencies (spectrum).…”

Section: Journal Of Nanomaterialsmentioning

confidence: 99%

Analysis of Electrical Characteristics of Pd/n-Nanocarbon/p-Si Heterojunction Diodes: By C-V-f and G/w-V-f

Zkria

Abubakr

Sittimart

et al. 2020

Journal of Nanomaterials

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Diamond films are candidate for a wide range of applications, due to their wide band gap, high thermal conductivity, and chemical stability. In this report, diamond-based heterojunction diodes (HJDs) were fabricated by growing n-type nanocarbon composite in the form of nitrogen-doped ultrananocrystalline diamond/amorphous carbon (UNCD/a-C:H:N) films onto p-type Si substrates. X-ray photoemission and the Fourier transform infrared spectroscopies were employed to examine the contribution of nitrogen atoms from the gas phase into the deposited films. The results indicate the incorporation of nitrogen atoms into the grain boundaries of UNCD/a-C:H film by replacing hydrogen atoms. The capacitance- (C-V-f), conductance- (G/ω-V-f), and series resistance-voltage characteristics of the fabricated Pd/n-(UNCD/a-C:H:N)/p-Si HJDs were studied in the frequency range of 40 kHz-2 MHz. The existence of interface states (Nss) and series resistance (Rs) were attributed to the interruption of the periodic lattice structure at the surface of the fabricated junction as well as the defects on the (UNCD/a-C:H:N)/Si interface. By increasing the frequency (≥500 kHz), the Nss reveals an almost frequency-independent behavior, which indicates that the charges at the interface states cannot follow ac signal at higher frequency. The obtained results demonstrated that the UNCD/a-C:H:N is a promising n-type semiconductor for diamond-based heterostructure diodes.

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A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures

Cited by 30 publications

References 40 publications

On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

Synthesis of Cr doped LiMnPO ₄ cathode materials and investigation of their dielectric properties

Analysis of Electrical Characteristics of Pd/n-Nanocarbon/p-Si Heterojunction Diodes: By C-V-f and G/w-V-f

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A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures

Cited by 30 publications

References 40 publications

On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

Synthesis of Cr doped LiMnPO 4 cathode materials and investigation of their dielectric properties

Analysis of Electrical Characteristics of Pd/n-Nanocarbon/p-Si Heterojunction Diodes: By C-V-f and G/w-V-f

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Synthesis of Cr doped LiMnPO ₄ cathode materials and investigation of their dielectric properties