A comparative study on the performance of Kesterite based thin film solar cells using SCAPS simulation program

Simya, O.K.; Mahaboobbatcha, A.; Balachander, K.

doi:10.1016/j.spmi.2015.02.020

Cited by 188 publications

(61 citation statements)

References 25 publications

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“…In Table 1, input parameters are illustrated for the reference. To avoid the complexity of interface defects at absorber/back contact, absorber/buffer, and buffer/window, we adopted the basic input parameters from literature, theories, or reasonable estimates [13][14][15][16]. …”

Section: Experminetal Methodsmentioning

confidence: 99%

“…Hence, we focus on main effects in quantum efficiency when a thin defective interface layer between CdS and CZTSSe is added in this study. [12][13][14][15]. For this simulation study, we insert the thin 5 nm defective interface layer between CdS and CZTSSe as a representation of the interface or near-interface defects.…”

Section: Trends By Various Interface Defect Distributionsmentioning

confidence: 99%

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Variation of Quantum Efficiency in CZTSSe Solar Cells with Temperature and Bias Dependence by SCAPS Simulation

Lee¹,

Price²

2017

JEPE

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Abstract:The quantum efficiency of CZTSSe (copper zinc tin sulphur selenium) thin film solar cells is numerically simulated at different temperatures and under a set of bias conditions about the efficiency limiting factors. A systematic methodology is developed and integrated into the proposed model to simulate the characteristics in the quantum efficiency. The proposed model is demonstrated with respect to an ideal device model under a set of bias conditions to selectively deactivate performance limiting parameters under light and voltage biased conditions. Under particular wavelength regions and bias conditions, a particular type of defects near the heterojunction interface significantly impact the carrier collection of devices. This deep acceptor type defect distribution is located in the band of +/-0.3 eV from the midgap. These defect states influence CZTSSe spectral responses of red and IR light wavelength regions in quantum efficiency caused by affected depletion width toward the back contact. Therefore, the quantum efficiency of CZTSSe devices is altered disproportionally at biased conditions.

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Section: Experminetal Methodsmentioning

confidence: 99%

Section: Trends By Various Interface Defect Distributionsmentioning

confidence: 99%

Variation of Quantum Efficiency in CZTSSe Solar Cells with Temperature and Bias Dependence by SCAPS Simulation

Lee¹,

Price²

2017

JEPE

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“…Table 1 shows ZnO:Al, ZnO and CdS material parameters used in the simulation which were selected based on experimental values reported on literature and theory. These parameters have been broadly used for modeling CIGS, CdTe and kesterite solar cells [23,25,26,[28][29][30][31]. On the other hand, most CZTS material properties used in the simulation were taken from the electrical and optical characterization results reported for CZTS-based solar cells with record efficiencies [1,32].…”

Section: Model Parametersmentioning

confidence: 99%

“…Furthermore, a conduction band-offset (DE C ) of 0.24 eV was taken into consideration as measured for CdS/CZTS heterojunction [10]. Moreover, a relative dielectric permittivity value of 10 was considered for CZTS compound as reported elsewhere [26,[28][29][30]34]. CZTS electron and hole effective masses were used to calculate the effective density of states of the conduction band (N c ) and the valence band (N v ).…”

Section: Model Parametersmentioning

confidence: 99%

Loss mechanisms influence on Cu2ZnSnS4/CdS-based thin film solar cell performance

Courel

Andrade‐Arvizu

Vigil‐Galán

2015

Solid-State Electronics

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“…Despite a recent significant improvement in Kesterite solar cells, one of the most fundamental problems that remain is lower Voc [14][15][16][17]. Moving Voc beyond 750 mV in Kesterite solar cells requires improvements in both built-in voltage and recombination.…”

Section: Introductionmentioning

confidence: 99%

Spectral Responses in Quantum Efficiency of Emerging Kesterite Thin-Film Solar Cells

Lee¹,

Price²

2017

Optoelectronics - Advanced Device Structures

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The spectral responses in quantum efficiency provide essential information about current generation, recombination, and diffusion mechanisms in a photodetector, photodiode, and photovoltaic devices as the quantum efficiency is a function of the voltage and light biases and the spectral content of the bias light and/or location of the devices. Recently, P-type Kesterite thin-film solar cells are emerging as they have a high absorption coefficient (>10 4 cm À1 ) and ideal direct bandgap (1.4-1.5 eV), which make them a perfect candidate for photovoltaic application. However, a champion device from Zincblende (CdTe) or Chalcopyrite (CIGS) solar cells shows~21% efficiency (<21.5%, First Solar and <21.7%, ZSW, respectively) while Kesterite devices suffer from severe losses with <12.6% efficiency. Furthermore, the maximum theoretical efficiency based on Shockley-Queisser limit is about 32.2%, which indicates there is much room for the improvement. Consequently, the implication from the current situation highlights the need for a systematic analysis of the loss mechanism in Kesterite devices. In this work, we carried out a systematic study of the efficiency limiting factors based on quantum efficiency to model the quantum efficiency response of current CZTSSe thin-film solar cells. This will provide the guidance for proper interpretation of device behaviors when it is measured by quantum efficiency.

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A comparative study on the performance of Kesterite based thin film solar cells using SCAPS simulation program

Cited by 188 publications

References 25 publications

Variation of Quantum Efficiency in CZTSSe Solar Cells with Temperature and Bias Dependence by SCAPS Simulation

Variation of Quantum Efficiency in CZTSSe Solar Cells with Temperature and Bias Dependence by SCAPS Simulation

Loss mechanisms influence on Cu2ZnSnS4/CdS-based thin film solar cell performance

Spectral Responses in Quantum Efficiency of Emerging Kesterite Thin-Film Solar Cells

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