A comparative study on conducted noise characteristics of SiC and GaN power transistor

Ibuchi, Takaaki; Funaki, Tsuyoshi

doi:10.1109/emceurope.2016.7739169

Cited by 16 publications

(5 citation statements)

References 9 publications

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“…High-frequency switching can downsize a power converter. However, EMI noise increases due to high di/dt and dv/dt switching required to reduce the switching loss [5]- [8]. The authors of [8] reported that high di/dt and dv/dt switching increases EMI noise, especially at high frequencies above 10 MHz.…”

Section: Introductionmentioning

confidence: 99%

Application of Frequency-Domain Noise-Source Model to Simulation of Time-Synchronized Near-Magnetic-Field Distribution above a Power Circuit

Takahashi,

Ibuchi,

Funaki

2024

IEEJ Journal IA

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The high-electromagnetic-interference (EMI)-noise area in a power circuit should be clarified when designing a low-EMI-noise power converter. For example, shielding of the power circuit prevents the EMI noise propagation to other circuits via near field couplings. It is important to know the high-EMI-noise area which should be shielded. The EMI noise distribution can be visualized by measuring the near-magnetic-field distribution above the power circuit. However, we cannot measure the near-magnetic-field distribution if there is not enough space for scanning a magnetic field probe between the power circuit and other circuits. Therefore, we propose to adopt a three-dimensional electromagnetic simulation for acquiring the near-magnetic-field distribution above a power circuit. In this paper, we study the validity of the frequency-domain noise-source model for the simulation of the nearmagnetic field distribution. We evaluate the near-magnetic-field distribution maps for turn-on and turn-off of the transistor, respectively. The high-EMI-noise area differs depending on frequencies. The high-EMI-noise area for turn-on is different from that for turn-off. We have clarified that each high-EMI-noise area can be predicted by the simulation.

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Section: Introductionmentioning

confidence: 99%

Application of Frequency-Domain Noise-Source Model to Simulation of Time-Synchronized Near-Magnetic-Field Distribution above a Power Circuit

Takahashi,

Ibuchi,

Funaki

2024

IEEJ Journal IA

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“…The technology could be evaluated using various performance metrics such as high frequency operation, high efficiency, high power level and high operating temperature [6][7][8][9]. Because of this enhanced performance, the GaN technology outperforms the Si and SiC technologies [10][11][12][13][14]. The performance enhancement is due to the Group III-Nitride material properties such as higher electron velocity and wide-band gap.…”

Section: Introductionmentioning

confidence: 99%

Novel super junction technique used in AlGaN/GaN HEMT for high power applications

Arunraja¹,

Jayanthy²

2022

Mater. Res. Express

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In this paper, a novel super junction technique in AlGaN/GaN HEMT is proposed and analyzed. The novel super junction is capable of splitting the potential drops to two points rather than a single point in the lateral axis (channel axis). Technology Computer Aided Design (TCAD) physical simulator is used to investigate the proposed GaN HEMT. Analyses of the simulation results, shows that the breakdown voltage of proposed AlGaN/GaN HEMT with super junction is higher than that of a conventional device. Proposed device demonstrated a breakdown voltage improvement of 26%. This is due to the reduction of peak electric field using super junction and it is evidenced in the simulation. Further, the Johnson figure of merit (JFOM) is extracted. The JFOM of proposed and conventional AlGaN/GaN HEMT are 4.89×1012 V/s and 3.79×1012 V/s, respectively. The JFOM in the proposed device is improved by 23 %. This improvement is mainly due to the improvement of breakdown voltage rather than cut-off frequency. Overall, the proposed device is a promising candidate for high-power applications as it can withstand higher voltages without compromising the switching-frequency.

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“…The emerging SiC MOSFETs are an attractive replacement of Si IGBTs for high power application such as automotive and aerospace [1,2]. However, the large di/dt and dv/dt leads to an adverse effect of increasing electromagnetic interference (EMI) [3][4][5][6]. It is difficult to measure a high-voltage and a large-current including radio frequency (RF) noise component with high accuracy in a highlyintegrated power conversion circuit.…”

Section: Introductionmentioning

confidence: 99%

Visualization of dynamic noise current distribution from Si and SiC power devices based on time-synchronized near magnetic field scanning

Ibuchi

Funaki

2020

2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE

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This report studies the visualization of dynamic noise current distribution in switching operation of Si and SiC power devices. The measurement system is developed to identify time-dependent near magnetic field distribution for periodic steady state circuit operation. The experimental results shown in this report demonstrate the usefulness of the developed system to identify the EMI noise generation and to visualize the time variation of noise current distribution in the power conversion circuit.

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A comparative study on conducted noise characteristics of SiC and GaN power transistor

Cited by 16 publications

References 9 publications

Application of Frequency-Domain Noise-Source Model to Simulation of Time-Synchronized Near-Magnetic-Field Distribution above a Power Circuit

Application of Frequency-Domain Noise-Source Model to Simulation of Time-Synchronized Near-Magnetic-Field Distribution above a Power Circuit

Novel super junction technique used in AlGaN/GaN HEMT for high power applications

Visualization of dynamic noise current distribution from Si and SiC power devices based on time-synchronized near magnetic field scanning

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