A comparative study of structural, optical and electrical properties of ZnS thin films obtained by thermal evaporation and SILAR techniques

Priya, Krishna; Ashith, V.K.; Rao, Gowrish K.; Sanjeev, Ganesh

doi:10.1016/j.ceramint.2017.05.094

Cited by 32 publications

(12 citation statements)

References 36 publications

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“…There are many deposition methods of ZnS thin films such as thermal evaporation method [6], ion assisted thermal evaporation [7], RF sputtering [8], spray pyrolysis [9], atomic layer deposition [10], electrochemical deposition [11], electron beam evaporation [12], SILAR [13], sol-gel [14], chemical bath deposition [15]. In this study, chemical bath deposition technique which is simple, safe and economic technique to deposit thin films has been used.…”

Section: Introductionmentioning

confidence: 99%

Influence of deposition temperature on structural, morphological, and optical properties of ZnS thin films

Temel

2018

Can. J. Phys.

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ZnS thin films were deposited onto glass substrates by chemical bath deposition (CBD) technique at different deposition temperatures (75, 80, 85, 90 °C) with non-toxic complexing agent tri-sodium citrate. Effects of deposition temperature on structural, morphological, and optical properties of thin films were investigated by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and ultraviolet–visible spectroscopy, respectively. The XRD results show that all produced ZnS thin films have cubic structure. The calculated grain size values are between 13 and 26 nm. It was observed that the grain size values increase and crystallization of films improve as the deposition temperature increases. The FESEM images reveal that film surfaces are formed by almost homogeneously dispersed nanostructured particles. Optical characterization results show that ZnS thin films have high transmittance of about 80% in the range of 400–800 nm with band gap energy values between 3.52 and 3.65 eV. As the deposition temperature increases, the band gap energy values increase. According to these results, it was observed that the structural, morphological, and optical properties of ZnS films vary depending on the deposition temperature.

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Section: Introductionmentioning

confidence: 99%

Influence of deposition temperature on structural, morphological, and optical properties of ZnS thin films

Temel

2018

Can. J. Phys.

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“…Where (h, k, l) are the Miller indices, d is the interplanar spacing which is determined by Bragg ' s equation [12]:…”

Section: Resultsmentioning

confidence: 99%

Study of Aluminum Doping Effect on Some Optical, Structural and Morphological Characteristics of Nanocrystalline Zinc Oxide Films

Mohammed¹,

Mansoor²,

Habeeb³

2020

DJPS

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Undoped and Aluminium (Al) doped ZnO thin films with different weight percentages (0, 2, 4, 6, 8%) were deposited on glass substrates using "sol-gel spin coating method". Optical, Crystal structural and surface morphological characteristics of all prepared samples have been studied in terms of their doping effects. The crystal structural analysis was done by X-ray diffraction, and the results showed that all prepared films have "polycrystalline hexagonal" type structure with preferred orientation along (002) for all films except for the percentage (4%) where its preferred orientation was (101). The Al doping leads to decrease the crystallite size of ZnO thin films. Other structural properties such as lattice constant, texture coefficient, dislocation density and number of crystalline per unit area for all prepared films have been calculated. (FE-SEM) images results showed that all prepared films were in the range of (10-100nm) scale nanostructure. Also, the values of average grain size decrease and the surfaces became more homogenous with increase of Al doping ratio. The optical results showed that the optical transmittance is >90%, while the optical energy gap increased with increase of Al doping ratio.

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“…It is also clear that the increase in the intensity of the peaks is due to the increase of CuS ratio, where the CuS phase becomes dominant resulting to the formation of larger crystals and reduction of crystalline defects and orientation to the preferred orientation of the CuS compound 17 . The interplanar spacing (d) was calculated using Bragg's equation 9 :…”

Section: Resultsmentioning

confidence: 99%

“…It also has several other potential applications such as electroluminescence devices and buffer layer for solar cells 9 , etc. ZnS has been deposited by various techniques such as molecular beam epitaxy 10 , MOCVD 11 , chemical bath deposition 12 , and pulsed electrodeposition 13 etc.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Study of Some Physical Properties of CuxZn1-xS Thin Films

2018

JCBSC

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In this study, Cu x Zn 1-x S (where x= 0, 0.1, 0.3, 0.5, 0.7, 0.9 and 1) thin films have been successfully deposited on glass substrates by chemical spray pyrolysis (CSP) technique at substrate temperature of (400 o C). The thickness of the prepared thin films was about (350 ± 30) nm measured by gravimetric method. Various characterization techniques have been used to investigate the structural and optical properties of the prepared thin films. The XRD results showed that the CuS film has a polycrystalline nature with covellite-hexagonal structure and preferred orientation along (103) plane, and the ZnS film has a polycrystalline wurtzite-hexagonal structure with preferred orientation along (0010) plane, while the thin films prepared with different mixing ratios have a polycrystalline structure and mixture phases of covellite-hexagonal and wurtzite-hexagonal. AFM results showed homogenous and smooth thin films. FESEM results showed the formation nanostructures with different shapes, such as cauliflower, semi-spherical, hexagonal, and in the form of plates and rods. The UV-Visible-NIR absorbance spectra were recorded in the range of (350-900) nm to investigate the optical characteristics. The results have shown that the transmittance of the prepared thin films decreases with increasing the CuS ratio and the absorption coefficient value is (α >10 4 cm-1) for all prepared thin films, which this in turn proved that the prepared thin films are likely to have direct electronic transitions. It is found that the optical energy gap decreases with increasing the CuS ratio, and it is in the range of (2.12-3.34) eV.

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A comparative study of structural, optical and electrical properties of ZnS thin films obtained by thermal evaporation and SILAR techniques

Cited by 32 publications

References 36 publications

Influence of deposition temperature on structural, morphological, and optical properties of ZnS thin films

Influence of deposition temperature on structural, morphological, and optical properties of ZnS thin films

Study of Aluminum Doping Effect on Some Optical, Structural and Morphological Characteristics of Nanocrystalline Zinc Oxide Films

Preparation and Study of Some Physical Properties of CuxZn1-xS Thin Films

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