A comparative study of strain relaxation effects on the performance of InGaAs quantum-well-based heterojunction phototransistors

Ghisoni, M.; Sjolund, O.; Larsson, Anders; Thordson, J.V.; Andersson, T.; Wang, S.M.; Hart, L.

doi:10.1109/2944.640631

Cited by 14 publications

(8 citation statements)

References 34 publications

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“…2. The use of a MQW intrinsic region between base and collector in HPT was reported by Ghisoni et al [9], as a way of improving the HPT performance, but they did not present any theoretical analysis for their device. We calculate the optical conversion gain of such a device as follows.…”

Section: Computing the Qw-hpt Optical Conversion Gainmentioning

confidence: 94%

Physical model for the transient response of a voltage‐tunable optoelectronic integrated functional device

Sheikhi

Ahmadi

Morravej‐Farshi

et al. 2003

phys. stat. sol. (c)

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A physical model for the characteristics of a voltage-tunable optoelectronic integrated functional device is outlined. The device consists in a vertical and direct integration of a quantum well structure heterojunction phototransistor (QW-HPT) over a QW laser diode. Based on the model, transient response of the device is analyzed numerically. The model derives two different modes of operation for the device: amplification mode for small, and switching mode for high optical feedback. IntroductionThe optoelectronic integrated device (OEID) which exhibits multifunctions such as optical amplification, bistability, and switching is of great interest in optoelectronic integrated circuits (OEIC). This device is considered to be the key element in the areas of fiber-optic communication systems, optical switching, and optical computation systems. A vertical and direct integration of a lightdetecting and light-emitting device, such as a heterojunction phototransistor (HPT) and a laser diode (LD) is an effective method to obtain an optoelectronic integrated device [1][2][3]. The operation of the device can be explained as follows: the input light is converted to photo-generated carriers through the light-detecting device, which drives the LD to on state. Integration of HPT over LD gives rise to new phenomena such as internal electrical and optical feedback between LD and HPT, which have been utilized to get new functions such as optical amplifier, optical switch, and optical bistable.Previously, we have presented a physical model for the operation of an HPT/LD OEID [4,5]. Based on this model, the dynamic and static response of a conventional OEID was numerically analyzed. The aim of this work is to improve and enhance the performance of the device and also to provide some more optical functions. For that purpose we propose a quantum well structure OEID (QW-OEID) monolithically integrated by a quantum well structure HPT with n-p-i-n configuration over a quantum well laser diode (QW-LD). This QW-OEID is a voltage tunable functional device. A physical model for the operation of QW-OEID is developed to investigate quantitatively the dynamic response of the device and its output characteristics. In Section 2, the structure and operation of the device are studied. The physical model and the theory of the numerical analysis of the QW-OEID are presented in Section 3. The results of the numerical analysis and the conclusion are brought in Sections 4 and 5, respectively.

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Section: Computing the Qw-hpt Optical Conversion Gainmentioning

confidence: 94%

Physical model for the transient response of a voltage‐tunable optoelectronic integrated functional device

Sheikhi

Ahmadi

Morravej‐Farshi

et al. 2003

phys. stat. sol. (c)

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“…Heterojunction phototransistors (HPTs) using III-V compound semiconductors have been extensively studied in the past two decades (1)(2)(3)(4)(5). The reasons behind the development of phototransistors are of (i) the internal transistor current gain which is expected to promote the optical detection sensitivity, (ii) high compatibility with HBT technology for compact, cost-effective, and high-yield integrated circuit, and (iii) high optical gain but low electrical power consumption.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of a Four-Terminal Dual-Emitter Heterojunction Phototransistor with a Base Current Bias

Chen

Hsu

et al. 2007

ECS Trans.

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This paper reports on a four-terminal dual-emitter heterojunction phototransistor (4T-DEPT) with a base biased by current source in comparison with a three-terminal dual-emitter heterojunction photoreansistor (3T-DEPT) without the additional current bias. While only voltage can be used to tune the optical performance of the 3T-DEPT, two kinds of operation modes, voltage- (VE21) and current- (IBdc) control modes, are considered for the 4T-DEPT. In addition to the power- and voltage-tunable optical gains, current-tunable one is also available in the 4T-DEPT operation. When the 4T-DEPT operates under the incident optical power (Pin) of 0.423 μW, it shows the maximum current-dependent gain-tuning efficiency of 62.66 μA-1 at VE21 = 0.06 V and IBdc = 0.001 μA. However, it is only 45.03 V-1 for the maximum voltage-dependent gain-tuning efficiency at VE21 = 0.06 V and IBdc = 0.25 μA.

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“…Since the 1980s, the photodetection mechanism of high electron mobility transistors (HEMTs) has been studied. [5][6][7][8][9][10] Among various types of phototransistors, pseudomorphic HEMTs (pHEMTs) have many advantages for monolithicmicrowave integrated-circuit (MMIC) optoelectronic integration. Since a large conduction band discontinuity at an AlGaAs/InGaAs heterojunction interface produces high two-dimensional electron gas (2DEG) densities in an InGaAs channel, a pHEMT provides a very high electron mobility without inducing electrons scattering, resulting in a high-frequency performance.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Mixing Phototransistor for Ultrawide-Band Fiber-Radio Systems

Lin¹,

Lai²

2006

jjap

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High quality hetero-epitaxial CeO 2 films are grown on MgO substrates using BaSnO 3 buffer layers. CeO 2 films and BaSnO 3 buffer layers are grown by a pulsed laser deposition method. It is found that the crystallinity of the CeO 2 films directly grown on MgO substrates is quite poor. However when we grow CeO 2 films on MgO substrates with a BaSnO 3 buffer layer, the crystallinity of CeO 2 films is improved from that of the directly grown CeO 2 films. Also the estimated in-plane crystallinity () of the CeO 2 films on the BaSnO 3 buffer layers is much improved by the introduction of the buffer layers. One of the reasons for high quality CeO 2 films are grown on MgO substrates by the introduction of BaSnO 3 buffer layers is the lattice matching between the CeO 2 films and the MgO substrates. The CeO 2 films grow in a 45 rotated mode to the BaSnO 3 buffered MgO substrates, then the lattice mismatch between the sublattice of the CeO 2 films and the MgO substrates is calculated to be 9.3%, while that of the CeO 2 films on MgO substrates in a cube on cube mode is over 25%.

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A comparative study of strain relaxation effects on the performance of InGaAs quantum-well-based heterojunction phototransistors

Cited by 14 publications

References 34 publications

Physical model for the transient response of a voltage‐tunable optoelectronic integrated functional device

Physical model for the transient response of a voltage‐tunable optoelectronic integrated functional device

Characteristics of a Four-Terminal Dual-Emitter Heterojunction Phototransistor with a Base Current Bias

Optoelectronic Mixing Phototransistor for Ultrawide-Band Fiber-Radio Systems

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