A Comparative Study of Single- and Dual-Threshold Voltage SRAM Cells
Pragya Kushwaha,
Amit Chaudhry
Abstract:In this paper, a comparison has been drawn between 5 transistor (5T), 6T and 7T SRAM cells. All the cells have been designed using both single-threshold (conventional) and dual-threshold (dual-Vt) voltage techniques. Their respective delays and power consumption have been calculated at 180 nm and 65 nm CMOS technology. With technology scaling, power consumption decreases by 80% to 90%, with some increase in write time because of the utilization of high- Vt transistors in write critical path. The results show t… Show more
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